Analysis of conduction mechanism in silicon nitride-based RRAM

SiO N films with different oxygen concentrations were fabricated by reactive magnetron sputtering, and the resistive switching characteristics and conduction mechanism of Cu/SiO N /ITO devices were investigated. The Cu/SiO N /ITO device with SiO N deposited in 0.8-sccm O flow shows a reliable resistive switching behavior, including good endurance and retention properties. As the conductivity of SiO N increases with the increase of the oxygen content dynamical electron trapping and detrapping is suggested to be the conduction mechanism. The temperature dependent I–V measurement indicates that the carrier transport can be ascribed to the hopping conduction rather than the metallic conductive filament.

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Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals

Kim

Jung

Kim

et al. 2015

IEICE Trans. Electron.

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Analysis of conduction mechanism in silicon nitride-based RRAM

Cited by 3 publications

References 15 publications

Investigating conduction mechanism and frequency dependency of nanostructured memristor device

Investigating conduction mechanism and frequency dependency of nanostructured memristor device

Effect of oxygen concentration on resistive switching behavior in silicon oxynitride film

Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals

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