Analysis of current–voltage characteristics for memristive elements in pattern recognition systems

Abstract

SUMMARY A topologically simple memristive‐based oscillatory network showing a wide plethora of dynamical behaviors may be a good candidate for the realization of innovative oscillatory associative and dynamic memories for the recognition of spatial–temporal synchronization states. The design of such pattern recognition systems may not leave aside a preliminary thorough investigation of the nonlinear dynamics of the network and its basic components. In a synchronization scenario with almost‐sinusoidal oscillations, each of the memristive elements used in the cells of the network under consideration features an unusual current–voltage behavior. This manuscript models the linear circuitry and the memristive element in each cell so as to capture the observed dynamics and then presents an analytical study explaining the quantitative dependence of memristive current–voltage behavior on excitation amplitude–angular frequency ratio and on initial condition on the system state. This work leads to the first rigorous classification of all possible current–voltage characteristics for a sine‐wave voltage‐driven memristive element. This analytical study shall pave way towards a better understanding of the complex and still unexplored dynamical properties of this nonlinear device, whose distinct features could improve the capabilities of future‐generation pattern recognition systems. Copyright © 2012 John Wiley & Sons, Ltd.

Variation of a classical fingerprint of ideal memristor

“…As follows from the procedure of its derivation, the fingerprint holds for arbitrary ideal memristors, thus for memristors with arbitrary possible memristance versus charge map R M (q), even if they can produce pinched hysteresis loops of various shapes [9]. Applying the duality principle, one can deduce that the aforementioned fingerprint also applies to ideal memristors driven by a sinusoidal voltage source that delivers an identical flux φ within each half-period independently of the frequency.…”

Hybrid Analysis of Nonlinear Circuits: DAE Models with Indices Zero and One

“…For this reason Chua called this circuit element a memory-resistor or memristor. As indicated in Section 1, the memristor and related devices have been the object of much recent attention: see [1,18,19,33,34,48,53,60,61,66] and references therein.…”

“…The report in 2008 of a nanoscale device with a memristive characteristic [66] had a great impact in electrical and electronic engineering and made the memristor and related devices a topic of active research (cf. [18,19,33,34,48,53,60,61,63] and references therein), which has been further motivated by the announcement of HP that commercial memory chips based on the memristor will be released in 2013 [1]. Including memristors in the study of analytical and numerical features of nonlinear circuits seems therefore to be important from both a theoretical and a practical perspective.…”

Unfolding the Threshold Switching Behavior of a Memristor

“…The most important tool for a circuit designer is the availability of a reliable [4] memristor model [5,6] capable to reproduce the nonlinear dynamics of the device [7] with sufficient accuracy and for a broad range of initial conditions and input signals [8]. At NaMLab we have direct access to the fabrication process and electrical characterization of a N bO x /N b 2 O 5 [9] microscale memristor of the kind mentioned above [2].…”