Analysis of dark current and detectivity of CdS/ZnSe Based multiple quantum well photodetector for mid-infrared applications

Roy, Bhaskar; Billaha, Aref; Dutta, Ritam; Mukherjee, Debasis

doi:10.1016/j.physe.2022.115614

Cited by 4 publications

(3 citation statements)

References 51 publications

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“…9 Various techniques have been developed for the detection of IR radiation, including the utilization of multi-quantum well (MQW) structures. 10 The success of QW structures for applications of IR detection has led to the expansion of research in the field of quantum dot IR photodetectors. 11 Conventional MQW structures, such as GaAs/AlGaAs, have been extensively studied for the realization of IR photodetectors based on intersubband transitions.…”

Section: Introductionmentioning

confidence: 99%

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Enhancing detectivity in mid-infrared photodetectors through structural parameter engineering in HgSe-HgTe colloidal quantum dots

Khodaverdizadeh,

Asgari

2024

J. Nanophoton.

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The escalating demand for cost-effective, flexible, and solution-processed materials in infrared (IR) photodetection presents a compelling alternative to current epitaxially grown optoelectronic technology. Colloidal quantum dots (CQDs) have emerged as a versatile platform for optoelectronic device fabrication, offering affordability, low-temperature synthesis, and scalability. Specifically, mercury chalcogenide CQDs exhibit notable intraband absorption in the mid-IR region. In this study, we explore an intraband HgSe-HgTe CQD photodetector structure tailored for mid-IR light detection. Through numerical optimization, we engineer detectivity by varying key design parameters-the film doping density, CQD diameter, and number of periods in the active layer-under different temperatures and biases. Results indicate that, at 60 K and 1 V bias, our optimally designed HgSe-HgTe CQD IR photodetector attains a peak detectivity of 8.14 × 10 10 Jones for a film doping density of 10 19 cm −3

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Section: Introductionmentioning

confidence: 99%

“…Various techniques have been developed for the detection of IR radiation, including the utilization of multi-quantum well (MQW) structures 10 . The success of QW structures for applications of IR detection has led to the expansion of research in the field of quantum dot IR photodetectors 11 .…”

Section: Introductionmentioning

confidence: 99%

Enhancing detectivity in mid-infrared photodetectors through structural parameter engineering in HgSe-HgTe colloidal quantum dots

Khodaverdizadeh,

Asgari

2024

J. Nanophoton.

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“…[1][2][3][4] CdS nanostructure-based photodetectors are gaining popularity due to their increased photosensitivity. [5][6][7][8] However, during the synthesis process, the creation of local non-stoichiometric conditions, characterized by the presence of point defects such as sulfur vacancies (V s ) and cadmium interstitials (Cd i ), occurs within the film. [3,[9][10][11] These defects have the capacity to influence the photo-conducting properties of bulk CdS.…”

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confidence: 99%

Enhancing Photodetection Performance and Thermal Tolerance of CdS Thin Films through Cobalt (Co) Doping

Halge,

Narwade,

Khanzode

et al. 2023

Adv Eng Mater

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A visible light photodetector is developed using cobalt (Co)‐doped cadmium sulfide (CdS) thin films that exhibits outstanding characteristics with a photocurrent of 284 μA, responsivity of 13.2 A W−1, an extraordinary external quantum efficiency (EQE) of 4550%, exceptional sensitivity (2.84 × 106%), and a rapid response time of 0.6 ms. These remarkable properties are most pronounced in 1 wt% Co‐doped CdS device and decrease with higher Co doping concentrations. This enhanced performance is attributed to the introduction of a defect energy band (DEB) near the CdS valence band, supported by UV‐Vis absorption spectra with a distinct feature at 744 nm. This DEB remains fully populated at room temperature and plays a vital role in responding to temperature variations. Our investigation reveals that 1 wt% Co‐doped CdS device exhibits significant (90%) thermal tolerance compared to pure CdS (10%) and higher Co doping concentrations (20%) in the temperature range of 27–110 °C. This improved thermal stability is attributed to the optimal Co doping concentration, striking a balance between thermal and photo‐excitation processes, thereby stabilizing the photocurrent. This research offers valuable insights into Co‐doped CdS thin films, promising robust and reliable photodetection devices, particularly suitable for applications with fluctuating temperatures.

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Performance improvement of GaAsSb/InGaAs DQW heterostructure by uni- and bi-axial pressure and field for IR-photodetector application

Ali,

Quraishi,

Khan

et al. 2024

Physica B: Condensed Matter

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Analysis of dark current and detectivity of CdS/ZnSe Based multiple quantum well photodetector for mid-infrared applications

Cited by 4 publications

References 51 publications

Enhancing detectivity in mid-infrared photodetectors through structural parameter engineering in HgSe-HgTe colloidal quantum dots

Enhancing detectivity in mid-infrared photodetectors through structural parameter engineering in HgSe-HgTe colloidal quantum dots

Enhancing Photodetection Performance and Thermal Tolerance of CdS Thin Films through Cobalt (Co) Doping

Performance improvement of GaAsSb/InGaAs DQW heterostructure by uni- and bi-axial pressure and field for IR-photodetector application

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