Analysis of dark current considering trap-assisted tunneling mechanism for InGaAs PIN photodetectors

Advances in High–Speed, High–Power Photodiodes: From Fundamentals to Applications

“…Therefore, a thinner absorber can be used in UTC-PD for a larger transit-time-limited bandwidth without sacrificing the RC-limited bandwidth by welldesigning a relatively thick collector. Additionally, some references show the detailed theoretical and experimental analysis of the characteristics for PIN-PD and UTC-PD, including energy band, electrical field, doping mechanism, optimization of absorber and collector, bandwidth, responsivity, saturation, and output power [56][57][58][59][60][61][62] as well as transient response [63], dark current [64,65], and P-contact shapes [66]. According to the abovementioned bandwidth equations and the values from Table 1, the 3-dB bandwidths for PIN-PD and UTC-PD can be calculated as shown in Figure 5a, including the assumed values during the calculation.…”

Dark current analysis of germanium-on-insulator vertical p-i-n photodetectors with varying threading dislocation density

“…[6][7][8] These defects states enhance the generation of minority carriers through trap states, which is the dominant leakage current mechanism in Ge PDs with high TDD. 16 Besides, the leakage current can be enhanced by the TAT leakage process. 16 The surface and bulk leakage current densities can be expressed by the following equation:…”

“…16 Besides, the leakage current can be enhanced by the TAT leakage process. 16 The surface and bulk leakage current densities can be expressed by the following equation:…”

High-performance GE/GESN photodetectors in near- and mid-infrared range

“…Jbulk is the dark current density where minority carriers are generated or tunneled through the depletion regions and defect states [81]. Trap states in defects, e.g., misfit and threading dislocations, are contributed to the generation or tunneling of minority carriers through trap centers, resulting in significant Jbulk [107].…”