Analysis of dark current generated by long-wave infrared HgCdTe photodiodes with different implantation shapes

Cui, Ailiang; Lingfeng, Liu; Sun, Chao; Ding, Ran; Li, He; Yu, Zhenhua

doi:10.1016/j.infrared.2019.103036

Cited by 4 publications

(1 citation statement)

References 29 publications

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“…HgCdTe photovoltaic detectors use the photovoltaic effect to convert light signals into electrical signals, having the advantages of high target resolution, fast response time, low power consumption and good reliability [5]. The performance of HgCdTe detectors is mainly limited by the dark current of the p-n junction [6,7], which has an impact on the noise level, quantum efficiency and the figure of merit R 0 A [8,9].…”

Section: Introductionmentioning

confidence: 99%

Impact of nitrogen annealing on the electrical properties of HgCdTe epitaxial films

Jin

Zhou

et al. 2023

Mater. Res. Express

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The nitrogen annealing of HgCdTe materials grown by molecular beam epitaxy (MBE) was carried out to manipulate their electrical properties. The results show that the annealing temperature, annealing time and cooling process all have significant influences on the electrical properties of HgCdTe materials. Excessive annealing temperature or long annealing time can make voids emerge on the surface of the CdTe passivation layer. Carrier concentration and mobility vary exponentially with annealing time and they reach an equilibrium value determined by annealing temperature over a long annealing duration. Moreover, time constants are given and a longer time is needed for mobility to reach an equilibrium value than carrier concentration. The relationship between equilibrium carrier concentration and annealing temperature is given and the activation energy under nitrogen annealing is calculated as 0.63 eV. For a long cooling duration, Hg vacancies are annihilated by Hg atoms diffusion, which makes carrier concentration lower and mobility higher. In addition, some outlier data were found in this experiment and explained by the combination between Te antisites and Hg vacancies.

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Section: Introductionmentioning

confidence: 99%

Impact of nitrogen annealing on the electrical properties of HgCdTe epitaxial films

Jin

Zhou

et al. 2023

Mater. Res. Express

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Mechanism of dark current dependence on reverse voltage in mid-wavelength infrared HgCdTe mesa PIN avalanche diode

Chen

et al. 2021

Opt Quant Electron

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Dark background correction with multivariate model fitting for infrared hyperspectral remote sensing

Zhang,

Xue,

et al. 2024

Measurement

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Analysis of dark current generated by long-wave infrared HgCdTe photodiodes with different implantation shapes

Cited by 4 publications

References 29 publications

Impact of nitrogen annealing on the electrical properties of HgCdTe epitaxial films

Impact of nitrogen annealing on the electrical properties of HgCdTe epitaxial films

Mechanism of dark current dependence on reverse voltage in mid-wavelength infrared HgCdTe mesa PIN avalanche diode

Dark background correction with multivariate model fitting for infrared hyperspectral remote sensing

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