Analysis of DC Characteristics and Small Signal Equivalent Circuit Parameters of GaAs Metal–Semiconductor Field Effect Transistors with Different Gate Lengths and Different Gate Contours by Two-Dimensional Device Simulations

Abstract

The gate length and gate contour of a GaAs metal-semiconductor field effect transistor (MESFET) device play important roles in determining the small signal circuit parameters and large signal breakdown voltage behavior. GaAs MESFETs with different gate lengths and gate contours were studied by the two-dimensional (2-D) semiconductor device simulations to investigate the dependence of small signal circuit parameters and breakdown voltage on gate length and gate contour. The results show that gate length affects small-signal circuit parameter C gs while gate contour affects C gd . The breakdown voltage has strong dependence on gate contour and little dependence on gate length.

Basic Study on the Radio Frequency Characteristics of the Transmission Lines Employing Periodically Perforated Ground Metal on GaAs Monolithic Microwave Integrated Circuit and Their Equivalent Ciruits

“…[26][27][28][29][30][31][32][33][34] Especially, full-wave EM simulation in multi-layer metal structure such as PPGM makes the design process very complicated. To solve this problem, RLC equivalent circuit [35][36][37][38][39][40][41][42] should be extracted. In this work, the equivalent circuit and closed-form equation of the microstrip line employing PPGM should be extracted for application to circuit design.…”