Analysis of DC–RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing

“…The results of DC and RF HTOL testing performed at UMS for the GH50-10 technology is shown in Figure 8. An activation energy of 1.82 eV was determined from the DC test results, with an MTTF >10 7 hours at an operating channel temperature of 175°C -illustrating the robustness of the GaN technology. For comparison, RF HTOL test have been performed for a select number of devices.…”

“…Silvaco Atlas was used to perform the 2D drift diffusion simulations, adapting the model described in [7,8]. Model parameters, including the polarization charge at the GaN/AlGaN interface and GaN mobility, were adjusted to match the measured transconductance, pinch-off voltage and saturated drain current.…”

Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN by photocapacitance method

“…1 The interface states are responsible for natural formation of a two-dimensional electron gas (2DEG), at the AlGaN/GaN interface and, on the other hand, for such undesired effects as virtual-gate formation and drain current collapse. [2][3][4][5][6][7] In spite of that, the main issues regarding interface states, i.e., their nature and density distribution D it ðEÞ in the most part of the AlGaN band gap is still under debate. In the literature, three main models of donor-like interface states were considered, namely a discrete level and states with uniform 2,[8][9][10] or U-shaped density distribution 5 in the AlGaN band gap.…”

NONLINEAR MODELING OF TRAPPING AND THERMAL EFFECTS ON GaAs AND GaN MESFET/HEMT DEVICES

“…1 is normally attributed to surface traps situated primarily between the gate and drain terminals [24][25][26][27]. For large negative gate potentials the energy states situated in the buffer region can, however, capture free charges and augment the gate-lag effect [27,28].…”