Analysis of Degree of Freedom of 4-SP&lt;sub&gt;xyz&lt;/sub&gt;S/S Parallel Mechanism of the Imitation of Human Wrist

Zang, Ke Jiang; Zang, Wan Shun; Li, Cai Hua; Hu, Xiao; Wang, Hai Xiang

doi:10.4028/www.scientific.net/amr.1006-1007.654

Cited by 1 publication

(1 citation statement)

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“…Variation in TMAl preflow may induced the two dimensional growth. TMAl form a nucleation site on the silicon to enhance the AlN wetting on Si [9]. As the number of nuclei density increased, the lateral and vertical growth of AlN will undergone with a higher rate.…”

Section: A Surface Morphology and Xrd Analysis Of Alnmentioning

confidence: 99%

Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD

Lumbantoruan

Wong

et al. 2014

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)

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The influence of TMAl preflow to the AlN buffer layer and GaN thin film was studied by Optical Microscope, Atomic Force Microscope, X-ray diffraction and Transmission Electron Microscope. Different duration of TMAl preflow lead to substantially differences of the AlN buffer layer and GaN film properties in terms of surface morphology and crystal quality. It was found without TMAl preflow the crystal quality of AlN buffer layer and GaN deteriorated due to the formation of amorphous interlayer between Si and AlN. Meltback etching and cracks was observed on the surface of GaN grown on AlN without TMAl preflow. However, overlong duration of TMAl preflow degraded the properties of AlN buffer layer and the subsequent GaN layer. GaN grown with longer TMAl preflow suffer of poor crystal quality, high density cracks and rough surface morphology. With the optimum duration of TMAl preflow, crystal quality and surface roughness of GaN can be improved. Keywords-GaN on Si(111); AlN buffer layer; TMAl preflow; MOCVDI.

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Section: A Surface Morphology and Xrd Analysis Of Alnmentioning

confidence: 99%