Analysis of depletion edge translation lightwave modulators

Mendoza-Álvarez, J.G.; Coldren, L.A.; Alping, A.; Yan, Ran; Hausken, T.; Lee, K.; Pedrotti, Kenneth D.

doi:10.1109/50.4068

Cited by 96 publications

(16 citation statements)

References 21 publications

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“…Besides LiNbO 3 modulators, the progress in monolithic integration is growing the development of InP-based integrated transmitters, with the benefits of lower voltage drive requirements, shorter devices and availability of integration with laser sources or optical amplifiers. InP modulators are based on the Kerr and Frank-Keldysh effect (bulk) or QCSE (MQW) so that the refractive index change is quadratic with voltage and the absorption change is linear with voltage [10]. The electro-refractive effect enables to build MZMs with low voltage drive requirements (2-3 V) and with electrode lengths around 1 mm.…”

Section: Inp-type Mach-zehnder Modulatormentioning

confidence: 99%

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Design of complex semiconductor integrated structures

et al. 2009

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Abstract:We present the benefits and limitations for designing complex optical semiconductor-based integrated structures by means of advanced numerical modeling. Multi-section tunable laser designs are presented and their tuning properties are analyzed for different architectures. We introduce a model of an integrated SOA with electroabsorption modulator. Its spectral properties are analyzed function of the parameters of the absorber section, showing the influence on the extinction ration of the generated signal. An InP-type Mach-Zehnder modulator is designed, illustrating the models of Kerr, Frank-Keldysh and QCSE effects. An example of a photo-detector demonstrates how dimensions and absorption parameters can be optimized to increase its detection bandwidth.

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Section: Inp-type Mach-zehnder Modulatormentioning

confidence: 99%

“…The use of a WDM-PONs to use an inte bit rates of 10 The Unit (ONU) in n alternative is erate at higher n EAM. In the ndex and ligh efractive index n the valence n r e s r n s r e ht x -conduction band cause the electro-absorption of light.…”

Section: Integratementioning

confidence: 99%

Design of complex semiconductor integrated structures

et al. 2009

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“…The distribution recovers to the equilibrium by the carrier-carrier scattering. Instantaneous mechanisms such as twophoton absorption [15,16] and the optical Kerr effects [17,18] will then influence on the SOA response. After few picoseconds, a quasi-equilibrium distribution due to the carrier temperature relaxation process will ensure the carrier density recovery [10].…”

Section: Icton-mw'08mentioning

confidence: 99%

Characterization of the semiconductor optical amplifier for amplification and photonic switching employing the segmentation model

Aziz

Ghassemlooy

et al. 2008

2008 2nd ICTON Mediterranean Winter

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This paper characterizes the gain and the carrier density responses of a semiconductor optical amplifier (SOA). In order to achieve the switching functions in SOA-based optical switches, such as Symmetric Mach-Zehnder (SMZ), the effect of the input signal on the total gain response of the SOA is investigated. The theoretical operation principle is demonstrated using a segmentation model that employs the complete rate equation with third order gain coefficients. Results obtained show the input boundaries and requirements in which the SOA can be efficiently used as an amplifier and as a switch.

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“…Quadratic effects are important for wavelengths near the absorption edge in bulk and MQW waveguides, where an electric field can move the effective absorption edge [2,3]. Also, in depletion regions of pn-junctions quadratic effects become dominant if a significant carrier density is being depleted at the same time [4]. We will come back to this topic after completing the linear effect.…”

mentioning

confidence: 99%

“…Since the index of refraction is decreasing roughly as 1/λ above the absorption edge, the application of a field also increases the index at some wavelength in this region. The combined effect is nearly quadratic with electric field [4]. Also, if free carriers are depleted when a field is applied, e.g., in the depletion region of a pn-junction, the index will increase due to the removal of the index reduction associated with the existence of free carriers as well as the shift in absorption edge due to a removal of band filling.…”

mentioning

confidence: 99%