Analysis of device parameters of Al/In2O3/p-Si Schottky diode

Ferroelectric Bi3.25La0.75Ti3O12 photodiode for solar cell applications

“…It is also observed that the G increases with the increasing frequency in the reverse bias voltage. The observed decrease in the capacitance and increase in the conductance with the increasing frequency, confirms the presence of interface states [33].…”

“…The higher value of ideality factor, compare to ideal value of 1, indicates that the current is influenced by the TE mechanism. The higher value of the ideality factor shows the presence of inhomogeneities of barrier height, the particular distribution of the interface states, generation-recombination currents within the space-charge region and series resistance [13,31,33,34].…”

“…The measured admittance (Y ma ) at strong accumulation region of device using the parallel RC circuit [31,33,40,42] is equivalent to the total circuit admittance as:…”

“…In order to obtain the real capacitance and conductance, the values of capacitance and conductance were corrected for removing the effect of series resistance using following equations. The corrected capacitance (C adj ) and conductance (G adj ) were calculated using the following expressions [19,31,33,44,46] …”

Composite metal oxide semiconductor based photodiodes for solar panel tracking applications

“…The R s value of the diodes decreases with the increasing in frequency. This behavior of R s is resulted from interface charge, fixed oxide charge, oxide-trapped charge and mobile oxide charge [54][55][56][57][58]. The R s -V curves of the photodiodes gives a peak and peak intensity is decreased with the frequency.…”