Analysis of electron beam-induced effect on electrical switching properties of glass chalcogenide GeTe thin films through Raman spectroscopy

Sarkar, D.; Sanjeev, Ganesh; Mahesha, M.G.

doi:10.1007/s00339-014-8841-1

Cited by 8 publications

(5 citation statements)

References 23 publications

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“…Figure 2a and b show the normalized Raman spectra of as-deposited and annealed GeTe films, respectively. The results are in good agreement with the literatures [27,28]. There were three distinctive bands between 100 and 300 cm −1 as shown in Fig.…”

Section: Resultssupporting

confidence: 92%

Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

et al. 2020

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GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical, and optical properties. A highperformance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8 × 10 11 Jones at 850 nm light irradiation at room temperature was demonstrated.

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Section: Resultssupporting

confidence: 92%

Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

et al. 2020

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“…1 (g) shows the line profiles of the lattice fringes shown in Fig Raman spectroscopy was performed to study the structure of the GeTe films before and after annealing using a Renishaw inVia Raman microscope equipped with an argon-ion laser operating at an excitation wavelength of 514 nm. [27,28]. There were three distinctive bands between 100 and 300 cm -1 as shown in Fig.…”

Section: Resultsmentioning

confidence: 91%

Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

Zhao

Tang

Yang

et al. 2020

Preprint

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Abstract GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8×10 11 Jones at 850 nm light irradiation at room temperature was demonstrated.

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“…The two characteristic peaks, A and B, originated from the Ge-Te vibration; the former among these is the double-degenerate E symmetry transverse/longitudinal optical modes, and the latter is the A 1 symmetry transverse optical mode. [36][37][38][39] Peak C is due to the long-range inter- actions between crystalline Te, and peak D is triggered by the vibrational density of states of the long Te chains in disorder. 37,40 Peak E may be assigned to the antisymmetric stretching mode of the GeTe 4 tetrahedra.…”

Section: Resultsmentioning

confidence: 99%