Analysis of europium doped luminescent barium thioaluminate

Zhang, Dongpu; Yu, Zhinong; Xue, Wu; Zhang, Ting; Ding, Zhao; Wang, Wuyu

doi:10.1016/s1002-0721(09)60077-6

Cited by 10 publications

(5 citation statements)

References 10 publications

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“…Zhang et al [24] found that the oxygen contained in BaSO 4 , which is an impurity in BaAl 4 S 7 host materials lead to poor blue-emitting performance. It was also found that although BaAl 2 S 4 and BaAl 4 S 7 are both members of the Ba-Al-S compounds, shifts in the PL emission peaks from the dopant Eu 2 + occurred [24]. The presence of impurities affected the PL spectra of the film.…”

Section: Photoluminescence Resultsmentioning

confidence: 99%

The effect of different gas atmospheres on luminescent properties of pulsed laser ablated SrAl2O4:Eu2+,Dy3+ thinfilms

Nsimama

Ntwaeaborwa

Swart

2011

Journal of Luminescence

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Section: Photoluminescence Resultsmentioning

confidence: 99%

The effect of different gas atmospheres on luminescent properties of pulsed laser ablated SrAl2O4:Eu2+,Dy3+ thinfilms

Nsimama

Ntwaeaborwa

Swart

2011

Journal of Luminescence

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“…. The films were further characterized by the fast and slow decays characteristics [39], since they are indicative of the different rates of decay for the films. The decay curves were fitted according to Eq.…”

Section: Photoluminescence Resultsmentioning

confidence: 99%

The influence of different species of gases on the luminescent and structural properties of pulsed laser-ablated Y2O2S:Eu3+ thin films

2016

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Y 2 O 2 S:Eu 3? films have been grown on Si (100) substrates by using a pulsed laser deposition technique. The thin films grown under vacuum, argon and oxygen ambient have been characterized using structural and luminescent measurements. The X-ray diffraction patterns showed mixed phases of cubic and hexagonal crystal structures. The crystallinity of the film deposited in vacuum is poor, but improved significantly in argon and oxygen atmosphere. Similarly, both scanning electron microscopy and atomic force microscopy confirmed that different species of gases affected the morphology of the films. The average band gap of the films calculated from diffuse reflectance spectra using the KubelkaMunk function was about 4.69 eV. The photoluminescence measurements indicated red emission of Y 2 O 2 S:Eu 3? thin films with the most intense peak appearing at 612 nm, which is assigned to the 5 D 0 -7 F 2 transition of Eu 3? . The intensities of this most intense peak greatly depend on the species of gas with argon having the highest peak. This phosphor has applications in the flat panel displays.

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“…So the target 1 has better stability. Additionally, according to Cho et al [11], pure cubic BaAl 2 S 4 :Eu is hard to be fabricated when the Al 2 S 3 is existed. Oxidation is inevitable during processing of target powder.…”

Section: Discussionmentioning

confidence: 99%

“…[5][6][7][8][9] The last one has been proved the most efficient and simplest method by now. [10,11] The sputtering target is the key point and the fabrication of it is valuable to be researched. In this work, the analysis on two targets produced by powder sintering method will be indicated.…”

Section: Introductionmentioning

confidence: 99%

Research and analysis on the thin films sputtered by the Ba-Al-S:Eu target fabricated by powder sintering

Zhang

et al. 2014

SPIE Proceedings

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Europium-doped barium thioaluminate (BaAl 2 S 4 :Eu) is currently the most efficient blue phosphor for inorganic thin film electroluminescent (iEL) device. To produce the full-color EL device, several kinds of blue-emitting layer were attempted and tested. As a key point of blue-emitting layer fabrication, single target sputtering deposition is an effective method. In this work, new structural target is introduced and the fabricated process is expatiated. The PL spectra of asfabricated targets show that both of two, 3mol% and 5mol% europium-doped, have blue emitting property. According to the PL spectra excited by 290nm, 300nm and 320nm ultraviolet, emission peaks located in the region near 470nm. So the as-fabricated targets can be used in single target sputtering deposition on thin film of BaAl 2 S 4 :Eu. XRD pattern indicates that there are 4 different phases, barium tetraaluminum sulfide (BaAl 4 S 7 ), barium sulfide (BaS), europium sulfide (EuS) and barium aluminum oxide (BaAl 2 O 4 ), in target 1. Besides these four compounds, other two phases, aluminum sulfide (Al 2 S 3 ) and barium thioaluminate (BaAl 2 S 4 ), are detected in target 2. Considering the analysis results, especially the hydrolyzation of Al 2 S 3 , target 1 is more suitable for sputtering deposition of BaAl 2 S 4 :Eu thin film. XPS and X-ray Fluorescence patterns describe the precise molar ratio of each element. In target 1 the relative atom concentration of barium, aluminum, sulfur and oxygen can be calculated from the pattern and molar ratio is about 9:33:41:17. Molar ratio of barium and europium is about 1:0.03. In short, the barium thioaluminate doped by europium sputtering target 1 is better to be applied in the fabrication of blue-emitting layer in inorganic electro-luminescent devices.

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Analysis of europium doped luminescent barium thioaluminate

Cited by 10 publications

References 10 publications

The effect of different gas atmospheres on luminescent properties of pulsed laser ablated SrAl2O4:Eu2+,Dy3+ thinfilms

The effect of different gas atmospheres on luminescent properties of pulsed laser ablated SrAl2O4:Eu2+,Dy3+ thinfilms

The influence of different species of gases on the luminescent and structural properties of pulsed laser-ablated Y2O2S:Eu3+ thin films

Research and analysis on the thin films sputtered by the Ba-Al-S:Eu target fabricated by powder sintering

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