Analysis of formation of hafnium silicide on silicon

Kircher, C. J.; Mayer, J. W.; Tu, King‐Ning; Ziegler, J. F.

doi:10.1063/1.1654565

Cited by 39 publications

(12 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For this purpose, a reactor and an experimental setup were used to minimize the effects of the reaction heat and thermal conductivity of the material. [85,87,88] As a result, the kinetic data of both absorption and decomposition curves could be fitted well over a wide range by applying a Johnson-Mehl-Avrami equation that describes the reacted fraction F when the ratelimiting process for the formation of the new phase is nucleation and growth (Eq. 7).…”

Section: Alanatesmentioning

confidence: 99%

Nanotechnological Aspects in Materials for Hydrogen Storage

Fichtner¹

2005

Adv Eng Mater

231

162

View full text Add to dashboard Cite

A nanotechnological app#roach aims at making tailor‐made developments for storage materials by combining different scientific disciplines and focussing on processes on the microscale. The approach has already been successful in achieving major advances in the field of novel solid materials for hydrogen storage. However, further breakthroughs are necessary to reach the goal of storage systems for fuel cell‐driven, mobile applications.

show abstract

Section: Alanatesmentioning

confidence: 99%

Nanotechnological Aspects in Materials for Hydrogen Storage

Fichtner¹

2005

Adv Eng Mater

231

162

View full text Add to dashboard Cite

show abstract

“…3 Recent results indicate that the thermal stability seems to be strongly dependent on the presurface created on the Si before the HfO x deposition and on the subsequent annealing procedure. [6][7][8][9] However, almost all of the published results indicate 5,14,19 that a high temperature annealing produces an inevitable Hf silicide component, which starts to form at the interface.…”

Section: Introductionmentioning

confidence: 99%

Hafnium silicide formation on Si(100) upon annealing

et al. 2006

View full text Add to dashboard Cite

High dielectric constant materials, such as HfO 2 , have been extensively studied as alternatives to SiO 2 in new generations of Si based devices. Hf silicate/silicide formation has been reported in almost all literature studies of Hf based oxides on Si, using different methods of preparation. A silicate interface resembles close to the traditional Si/ SiO 2 . The silicate very likely forms a very sharp interface between the Si substrate and the metal oxide, and would be suitable for device applications. However, the thermal instability of the interfacial silicate/oxide film leads to silicidation, causing a dramatic loss of the gate oxide integrity. Despite the importance of the Hf silicide surface and interface with Si, only a few studies of this surface are present in the literature, and a structural determination of the surface has not been reported. This paper reports a study of the Hf silicide formation upon annealing by using a combination of XPS, LEED, and x-ray photoelectron diffraction ͑XPD͒ analyses. Our results clearly indicate the formation of a unique ordered Hf silicide phase ͑HfSi 2 ͒, which starts to crystallize when the annealing temperature is higher than 550°C.

show abstract

“…[8][9][10] . In these works, Hf was deposited on Si substrates, and the kinetics of the reaction to form HfSi and then HfSi 2 were monitored.…”

Section: Introductionmentioning

confidence: 99%

Hafnium silicide formation onSi(001)

et al. 2004

View full text Add to dashboard Cite

The solid-state reaction of thick ͑ϳ50 nm͒ and thin ͑ϳmonolayer͒ films of Hf with cleaned and oxidized Si͑001͒ substrates was investigated. Upon annealing to 1000°C, films of HfSi 2 were formed after reaction times that depended upon the surface condition of the substrate before deposition. The chemical state of the reacted surfaces was characterized using x-ray photoelectron spectroscopy, and the shifts in binding energy upon silicide formation were recorded. Even for thick films, low-energy electron diffraction (LEED) revealed that the ͑2 ϫ 1͒ pattern of the Si substrate emerged, suggesting that three-dimensional islanding of the HfSi 2 film had occurred. The islanding behavior was investigated for both thick and thin films using LEED, atomic force microscopy, and scanning electron microscopy. Streaking in the LEED patterns for the thick films suggest that the island morphology is influenced by the underlying Si substrate.

show abstract

Analysis of formation of hafnium silicide on silicon

Cited by 39 publications

References 9 publications

Nanotechnological Aspects in Materials for Hydrogen Storage

Nanotechnological Aspects in Materials for Hydrogen Storage

Hafnium silicide formation on Si(100) upon annealing

Hafnium silicide formation onSi(001)

Contact Info

Product

Resources

About