Analysis of GaN crystal growth mechanism in liquid-phase epitaxial Na-flux method

Huang, Gemeng; Hao, Hangfei; Yang, Chen; Ma, Ming; Xia, Song; Fan, Shiji; Li, Zhenrong

doi:10.1007/s10853-024-09613-5

J Mater Sci

2024

DOI: 10.1007/s10853-024-09613-5

|View full text |Cite

Analysis of GaN crystal growth mechanism in liquid-phase epitaxial Na-flux method

Gemeng Huang,

Hangfei Hao,

Chen Yang

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2024

2025

Publication Types

Select...

Article3

Relationship

Self Cite0

Independent3

Authors

Journals

Cited by 3 publications

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

New Flux-Excess Aid Technology in the Na-Flux Liquid-Phase Epitaxial Growth of GaN Crystals

Yang,

Huang,

Yan

et al. 2024

Crystal Growth & Design

View full text Add to dashboard Cite

2 in. GaN crystals (2 in.) were grown on MOCVD-GaN films by the Na flux liquid-phase epitaxial (LPE) method with a new flux-excess aid technology. By adding a certain amount of additional Na flux during the growth process, the height of the growth solution remained essentially unchanged after growth, meaning that Na volatilization was effectively suppressed. The effects of flux-excess on GaN crystal growth were investigated. The results show that the grown GaN crystal has a flatter crystal surface, an epitaxial thickness of up to ∼1500 μm, and the single-crystal yield has a 19% increase compared to nonflux-excess condition. X-ray rocking curves results on the surface of the crystal (0002) show that the fwhm of the flux-excess grown crystal is about 344 arcsec, a marked improvement over the nonexcessive condition (∼1488 arcsec). Simulations of the distribution of the nitrogen concentration in the Ga−Na melt at the beginning and end of the growth revealed that the nitrogen concentration is higher for flux-excess growth than that for nonexcessive growth, and that the nitrogen concentration is lower in the center near the surface of the seed crystals and higher at the edges. Therefore, the flux-excess aid technology may provide a pathway to realize the growth of high-quality GaN crystals using the Na-flux LPE growth method.

show abstract

New Flux-Excess Aid Technology in the Na-Flux Liquid-Phase Epitaxial Growth of GaN Crystals

Yang,

Huang,

Yan

et al. 2024

Crystal Growth & Design

View full text Add to dashboard Cite

show abstract

Influence of Na : Ga ratios under the flux-excess aid on GaN crystal growth using the Na-flux LPE method

Yang,

Huang,

Pan

et al. 2025

CrystEngComm

View full text Add to dashboard Cite

show abstract

Molecular Beam Epitaxial Growth and Optical Properties of InN Nanostructures on Large Lattice-Mismatched Substrates

Nie,

Hu,

et al. 2024

Materials

View full text Add to dashboard Cite

Narrow-gap InN is a desirable candidate for near-infrared (NIR) optical communication applications. However, the absence of lattice-matched substrates impedes the fabrication of high-quality InN. In this paper, we employed Molecular Beam Epitaxy (MBE) to grow nanostructured InN with distinct growth mechanisms. Morphological and quality analysis showed that the liquid phase epitaxial (LPE) growth of hexagonal InN nanopillar could be realized by depositing molten In layer on large lattice-mismatched sapphire substrate; nevertheless, InN nanonetworks were formed on nitrided sapphire and GaN substrates through the vapor-solid process under the same conditions. The supersaturated precipitation of InN grains from the molten In layer effectively reduced the defects caused by lattice mismatch and suppressed the introduction of non-stoichiometric metal In in the epitaxial InN. Photoluminescence and electrical characterizations demonstrated that high-carrier concentration InN prepared by vapor-solid mechanism showed much stronger band-filling effect at room temperature, which significantly shifted its PL peak to higher energy. LPE InN displayed the strongest PL intensity and the smallest wavelength shift with increasing temperature from 10 K to 300 K. These results showed enhanced optical properties of InN nanostructures prepared on large lattice mismatch substrates, which will play a crucial role in near-infrared optoelectronic devices.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Analysis of GaN crystal growth mechanism in liquid-phase epitaxial Na-flux method

Cited by 3 publications

References 33 publications

New Flux-Excess Aid Technology in the Na-Flux Liquid-Phase Epitaxial Growth of GaN Crystals

New Flux-Excess Aid Technology in the Na-Flux Liquid-Phase Epitaxial Growth of GaN Crystals

Influence of Na : Ga ratios under the flux-excess aid on GaN crystal growth using the Na-flux LPE method

Molecular Beam Epitaxial Growth and Optical Properties of InN Nanostructures on Large Lattice-Mismatched Substrates

Contact Info

Product

Resources

About