Analysis of GaN Damage Induced by Cl<sub>2</sub>/SiCl<sub>4</sub>/Ar Plasma

Minami, Masaki; Tomiya, Shigetaka; Ishikawa, Kenji; Matsumoto, Ryosuke; Shang, Chen; Fukasawa, Masanaga; Uesawa, Fumikatsu; Sekine, Makoto; Hori, Masaru; Tatsumi, Tetsuya

doi:10.7567/jjap.50.08je03

Cited by 50 publications

(24 citation statements)

References 21 publications

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“…All these ions and emitted light must be avoided to improve the crystal quality. [52] In all previous works on PEMOCVD, [28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43][44][45][46][47] hardly any attention was paid to the charged ions and emitted light. Remote plasma-enhanced MOCVD (RPEMOCVD) studied by Choi et al [29] and Lai et al [36] may give some solution but the required crystal quality was not achieved in their case.…”

Section: The Necessity Of Novel Mocvd Methodsmentioning

confidence: 99%

Novel Epitaxy for Nitride Semiconductors Using Plasma Technology

Oda

Hori

2020

Physica Status Solidi (a)

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For the production of nitride‐based optical and power devices, it is known that metal organics chemical vapor deposition (MOCVD) is an industrial method which is used worldwide. However, MOCVD has disadvantages: 1) a lot of ammonia gas is consumed; 2) the sublimation of GaN is not negligible at growth temperature and these increase the production cost; 3) the growth of in‐containing nitrides is difficult because the growth temperature is too high; and 4) using large Si substrates of 150–300 mm diameter for industrial production, wafer breakage and bowing occur. It is therefore important to develop novel epitaxial growth methods that can replace the MOCVD method. Recently, high‐density radical source (HDRS) is developed by combining inductively coupled plasma (ICP) and capacitively coupled plasma (CCP) which can be applied to molecular beam epitaxy (MBE) in order to increase the growth rate of nitrides. Another novel method, the radical enhanced MOCVD (REMOCVD) method with using very high frequency (VHF) plasma, has also been developed. This REMOCVD allows the low growth temperature without using any ammonia gas. These novel methods are promising for replacing the MOCVD method from the viewpoint of production cost without ammonia gas usage.

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Section: The Necessity Of Novel Mocvd Methodsmentioning

confidence: 99%

Novel Epitaxy for Nitride Semiconductors Using Plasma Technology

Oda

Hori

2020

Physica Status Solidi (a)

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“…However, in the process of plasma etching gate recess, it often suffers from either serious etching damage or large device leakage current. [6][7][8] In order to improve the device characteristics, different interface treatment methods after recess etching have been widely studied, such as annealing after recess etching, [9] plasma treatment, [10][11][12] solution treatment, [13,14] and so on. Mi et al used N 2 O plasma to treat the interface by plasma-enhanced chemical vapor deposition (PECVD).…”

Section: Introductionmentioning

confidence: 99%

Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N₂O radical treatment

Zhang¹,

Wu²,

Hou³

et al. 2022

Chinese Phys. B

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In this work, the N2O radicals in-situ treatment on gate region has been employed to improve device performance of recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs). The samples after gate recess etching were treated by N2O radicals without physical bombardment. After in-situ treatment (IST) processing, the gate leakage currents decreased by more than one order of magnitude compared to the sample without IST. The fabricated HEMTs with the IST process show a low reverse gate current of 10-9 A/mm, high on/off current ratio of 108, and high fT×Lg of 13.44 GHz·μm. A transmission electron microscope (TEM) imaging illustrates an oxide layer with a thickness of 1.8 nm exists at the AlGaN surface. X-ray photoelectron spectroscopy (XPS) measurement shows that the content of the Al-O and Ga-O bonds elevated after IST, indicating that the Al-N and Ga-N bonds on the AlGaN surface were broken and meanwhile the Al-O and Ga-O bonds formed. The oxide formed by a chemical reaction between radicals and the surface of the AlGaN barrier layer is responsible for improved device characteristics.

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“…One of the most serious technical obstacles toward the realization of high‐performance micro‐LED displays is the strong decrease in internal quantum efficiency (IQE) with the decrease in chip size to below a few tens of micrometers, especially at the current density region lower than 20 A cm −2 . In the fabrication of conventional GaN‐based micro‐LEDs, inductively coupled plasma (ICP) etching was typically used to define the LED mesa, during which high‐density crystalline defects acting as nonradiative recombination centers will be inevitably generated on the sidewall surface of the LED mesa over a depth of a few tens of nanometers due to ion bombardment and high‐energy and high‐density (≈50 mW cm −2 ) UV photon irradiation from the plasma . These plasma‐induced defects will significantly reduce the IQE value of micro‐LEDs due to their very large sidewall surface area to volume ratio compared with the conventional large‐area LEDs, especially at low current densities.…”

Section: Introductionmentioning

confidence: 99%

Near‐Complete Elimination of Size‐Dependent Efficiency Decrease in GaN Micro‐Light‐Emitting Diodes

Zhu

Takahashi

Ohori

et al. 2019

Physica Status Solidi (a)

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Herein, a successful elimination of the size-dependent efficiency decrease in GaN micro-light-emitting diodes (micro-LEDs) is achieved using damage-free neutral beam etching (NBE). The NBE technique, which can obtain ultralow-damage etching of GaN materials, is used in place of the conventional inductively coupled plasma to form the micro-LED mesa. It is found that all the fabricated micro-LEDs with sizes ranging from 40 to 6 μm show external quantum efficiency (EQE) versus current density characteristics similar to those of large-area GaN LEDs, with a maximum in EQE curves at a current density of as low as about 5 A cm À2 . Furthermore, all the fabricated micro-LEDs, even the 6 μm one, show a similar value of maximum EQE with a variation of less than 10%, clearly indicating a negligible size dependence of emission efficiency of micro-LEDs fabricated by the NBE technique at least down to the size of 6 μm. These results suggest that the NBE process is a promising method of fabricating high-efficiency sub-10 μm GaN

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Analysis of GaN Damage Induced by Cl₂/SiCl₄/Ar Plasma

Cited by 50 publications

References 21 publications

Novel Epitaxy for Nitride Semiconductors Using Plasma Technology

Novel Epitaxy for Nitride Semiconductors Using Plasma Technology

Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N₂O radical treatment

Near‐Complete Elimination of Size‐Dependent Efficiency Decrease in GaN Micro‐Light‐Emitting Diodes

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Analysis of GaN Damage Induced by Cl2/SiCl4/Ar Plasma

Cited by 50 publications

References 21 publications

Novel Epitaxy for Nitride Semiconductors Using Plasma Technology

Novel Epitaxy for Nitride Semiconductors Using Plasma Technology

Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N2O radical treatment

Near‐Complete Elimination of Size‐Dependent Efficiency Decrease in GaN Micro‐Light‐Emitting Diodes

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Analysis of GaN Damage Induced by Cl₂/SiCl₄/Ar Plasma

Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N₂O radical treatment