Analysis of Gate-Metal Resistance in CMOS-Compatible RF GaN HEMTs

ElKashlan, Rana; Rodríguez, R.; Yadav, Sachin; Khaled, Ahmad; Peralagu, Uthayasankaran; Alian, A.; Waldron, Niamh; Zhao, Ming; Wambacq, Piet; Parvais, B.; Collaert, N.

doi:10.1109/ted.2020.3017467

Cited by 7 publications

(5 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Using the R G model in [12] and the TCAD simulations to explore more l gfp geometries, it is observable that the parabolic The ratio between the output and input device impedance refers to the term…”

Section: The Gan Hemt Devicesmentioning

confidence: 99%

“…The source and drain access resistances ( R S , R D ) can be calculated from the R SH and R C , where R S , D = R SH l gs , gd + R C . The gate resistance ( R G ) estimation relies on the T-gate dimensions, the gate-line sheet resistance and via resistances as detailed in [12]. A first-order prediction of the gate-to-source capacitance ( C GS ), neglecting the fringing effect, can be deduced from the gate length and barrier thickness ( T BAR ) using C GS = ɛl g / T BAR .…”

Section: T-gate Geometry: Rf Small-signal Trade-offsmentioning

confidence: 99%

“…6(c)) and capacitance reduction (Figs 6(b) and 6(d)). Variation in the l gfp dimensions results in a trade-off between R G and C GD [12]. Assuming negligible l gfp influence on the ratio between the output and input device impedance 1 in the formulation for f MAX , the time constant (Fig.…”

Section: T-gate Geometry: Rf Small-signal Trade-offsmentioning

confidence: 99%

“…Using the R G model in [12] and the TCAD simulations to explore more l gfp geometries, it is observable that the parabolic ratio between f T and has an optimum beyond which its value declines. In the case of small l gfp , the decline is a result of a rise in R G , and for larger l gfp , it is a consequence of an increase in C GD coupled with a lower g m .…”

Section: T-gate Geometry: Rf Small-signal Trade-offsmentioning

confidence: 99%

See 3 more Smart Citations

RF linearity trade-offs for varying T-gate geometries of GaN HEMTs on Si

ElKashlan

Khaled

Rodríguez

et al. 2023

Int. J. Microw. Wireless Technol.

Self Cite

View full text Add to dashboard Cite

Short-channel Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) often utilize T-shape gates due to their large gate-line cross-sectional area and subsequent fMAX increase. In this paper, we report the linearity trade-offs associated with varying the T-gate geometries of AlGaN/GaN HEMTs on Si, specifically the gate extensions which serve as field plates and their impact on the large-signal performance. Small-signal characterization and modeling, in addition to TCAD, provide initial guidelines for the optimal dimensions for the gate field plates using the ratio of fT and the product of the gate resistance and the gate-to-drain capacitance. We utilize various characterization methods, including 6 GHz non-linear vector network analyzer characterization in addition to load-pull, to quantify the amplitude and phase distortion and their subsequent impact on the large-signal metrics of the devices under differing matching conditions and bias points. We deduce that the influence of the gate field plates on the amplitude and phase distortion is non-negligible, particularly under matched conditions.

show abstract

Section: The Gan Hemt Devicesmentioning

confidence: 99%

Section: T-gate Geometry: Rf Small-signal Trade-offsmentioning

confidence: 99%

Section: T-gate Geometry: Rf Small-signal Trade-offsmentioning

confidence: 99%

Section: T-gate Geometry: Rf Small-signal Trade-offsmentioning

confidence: 99%

See 2 more Smart Citations

RF linearity trade-offs for varying T-gate geometries of GaN HEMTs on Si

ElKashlan

Khaled

Rodríguez

et al. 2023

Int. J. Microw. Wireless Technol.

Self Cite

View full text Add to dashboard Cite

show abstract

“…This is, however, usually achieved at the expense of additional parasitic effects, which also limit both the small-signal gain and the noise of the transistor. [7,8] Furthermore, as a consequence of the skin-depth effect in normal metals, it is known that the microwave conduction losses related to the metallization will increase with the frequency. This also leads to the deviation of the gate resistance from that of the dc operation at high-frequency limits.…”

mentioning

confidence: 99%

GaN High‐Electron‐Mobility Transistors with Superconducting Nb Gates for Low‐Noise Cryogenic Applications

Mebarki

Castillo

Pavolotsky

et al. 2022

Physica Status Solidi (a)

View full text Add to dashboard Cite

The applications dealing with the processing and detection of extremely weak signals, such as quantum-computing systems as well as the instrumentation in radio-astronomy and space-science fields, require ultimate low-noise performance. High-electron-mobility transistors (HEMTs) are widely used in these applications, operating at cryogenic temperatures in order to reduce the noise and comply with challenging requirements. The gallium nitride (GaN)-based technology emerges as a potential candidate for the low-noise cryogenic applications, given the significant improvements of the material properties at low temperatures. [1,2] Furthermore, the noise performance of the GaN-based low-noise amplifiers (LNAs) was experimentally demonstrated to improve when cooled down to 4 K [3] One of the physical parameters limiting the noise performances of the GaN HEMTs, and more generally those of field-effect transistors (FETs), is related to the resistance of the gate electrode metallization. Indeed, this resistance introduces a thermal noise source,

show abstract

Gallium nitride technologies for wireless communication

Collaert

2024

New Materials and Devices Enabling 5G Applications and Beyond

View full text Add to dashboard Cite

Analysis of Gate-Metal Resistance in CMOS-Compatible RF GaN HEMTs

Cited by 7 publications

References 15 publications

RF linearity trade-offs for varying T-gate geometries of GaN HEMTs on Si

RF linearity trade-offs for varying T-gate geometries of GaN HEMTs on Si

GaN High‐Electron‐Mobility Transistors with Superconducting Nb Gates for Low‐Noise Cryogenic Applications

Gallium nitride technologies for wireless communication

Contact Info

Product

Resources

About