Analysis of grain orientation in cold crucible continuous casting of photovoltaic Si

Gallien, B.; Duffar, T.; Lay, S.; Robaut, F.

doi:10.1016/j.jcrysgro.2010.10.100

Cited by 28 publications

(19 citation statements)

References 14 publications

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“…In fact, the grain structure in multi-crystalline silicon largely depends on a series of phenomena related to faceting/undercooling of the solid-liquid interface during growth as for example twinning [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

{1 1 1} facet growth laws and grain competition during silicon crystallization

Stamelou

Tsoutsouva

Riberi-Béridot

et al. 2017

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

{1 1 1} facet growth laws and grain competition during silicon crystallization

Stamelou

Tsoutsouva

Riberi-Béridot

et al. 2017

Journal of Crystal Growth

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“…have been previously studied in cast multi-crystalline silicon ingots by Electron Backscattered Diffraction (EBSD) [15,16]. In particular, the importance of twinning in the development of the grain structure has been highlighted for different solidification processes ranging from directional solidification [17] to ribbon growth [18].…”

Section: Introductionmentioning

confidence: 99%

On the impact of twinning on the formation of the grain structure of multi-crystalline silicon for photovoltaic applications during directional solidification

Riberi-Béridot

Mangelinck‐Noël

Tandjaoui

et al. 2015

Journal of Crystal Growth

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International audienceGrain orientation and competition during growth has been analyzed in directionally solidified multi-crystalline silicon samples. In situ and real-time characterization of the evolution of the grain structure during growth has been performed using synchrotron X-ray imaging techniques (radiography and topography). In addition, Electron Backscattered Diffraction has been used to reveal the crystalline orientations of the grains and the twin relationships. New grains formed during growth have two main origins: random nucleation and twinning. It is demonstrated that the solidified samples are dominated by ∑3 twin boundaries showing that twinning on {111} facets is the dominant phenomenon. Moreover, thanks to the in situ characterization of the growth, it is shown that twins nucleate on {111} facets located at the sides of the sample and at grain boundary grooves. The occurrence of multiple ∑3 twins during growth prevents the initial grains from developing all along the sample, and twin boundaries with higher order coincidence site lattices can form at the encounter of two grains in twin position. The grain competition phenomenon following nucleation and twinning acts as a grain selection mechanism leading to the final grain structure

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“…Coincident site lattice type of grain boundaries are the most common ones-especially in Σ3, Σ9 and Σ27 configurations. Previous studies in multicrystalline silicon report between 22% and 64% of Σ3 grain boundaries, between 9% and 12% of Σ9 and between 3% and 9% of Σ27 [9][10][11]. These grain boundaries form junctions and topological imperfections such as kinks and steps.…”

Section: Introductionmentioning

confidence: 99%