Analysis of heterointerface recombination by Zn1−xMgxO for window layer of Cu(In,Ga)Se2 solar cells

Tanaka, K.; Minemoto, Takashi; Takakura, Hideyuki

doi:10.1016/j.solener.2008.09.003

Cited by 78 publications

(37 citation statements)

References 5 publications

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“…To investigate the dominant mechanism of carrier recombination (at interface or in SCR) of the CIGSSe solar cell before and after the HLS + LS process, the temperature dependent J‐V characteristic was additionally performed under AM 1.5G illumination using a cryostat cooled with liquid‐N 2 and heated by temperature controller (Model 9700, Scientific Instruments). The temperature was in a range of 200 to 300 K. The J SC as a function of V OC is given by M. Turcu et al,

J_{SC} = J_{0} exp ((), \frac{{qV}_{OC}}{nk T}) = J_{00} exp ((), \frac{{qV}_{OC}}{italicnkT}) exp ((), \frac{- E_{A}}{italicnkT})

where n and J 0 are ideality factor and reverse saturation current density of the diode, kT/q is thermal voltage, J 00 is a weakly temperature‐dependent term, and E A is activation energy of recombination. According to Equation , V OC is expressed by,

V_{OC} = \frac{E_{A}}{q} - \frac{nkT}{q} ln ((), \frac{J_{00}}{J_{SC}}) .

…”

Section: Methodsmentioning

confidence: 99%

Enhancement of photovoltaic performances of Cu (In,Ga)(S,Se)₂ solar cell through combination of heat‐light soaking and light soaking processes

Chantana

Kato

Sugimoto

et al. 2018

Progress in Photovoltaics

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Potassium-treated Cu (In,Ga)(S,Se) 2 (CIGSSe)-based solar cell with power conversion efficiency (η) of 19.4% is obtained using high transparent Cd 0.75 Zn 0.25 S/ Zn 0.79 Mg 0.21 O/Zn 0.88 Mg 0.12 O:Al layers to minimize optical loss at short wavelength (~520 nm) and to control total conduction band minimum alignment. To further enhance η, the post treatment named HLS + LS process, including heat-light soaking (HLS) at 110°C under AM 1.5G illumination followed by light soaking (LS) under AM 1.5G illumination, is conducted successively on the as-fabricated solar cell. It is revealed that HLS in the HLS + LS process mainly yields the increase in open-circuit voltage. On the other hand, LS in the HLS + LS process primarily leads to the increase in fill factor, attributable to the decrease in sheet resistance of Zn 0.88 Mg 0.12 O:Al. The HLS + LS process consequently gives rise to not only the enhancement of carrier concentration but also the decrease in the recombination rate at the buffer/absorber interface through passivating the recombination centers. As a result, 21.2%-efficient CIGSSe solar cell with the Cd 0.75 Zn 0.25 S/Zn 0.79 Mg 0.21 O/Zn 0.88 Mg 0.12 O:Al layers is attained after the HLS + LS process, which is an effective process to enhance photovoltaic performances.

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J_{SC} = J_{0} exp ((), \frac{{qV}_{OC}}{nk T}) = J_{00} exp ((), \frac{{qV}_{OC}}{italicnkT}) exp ((), \frac{- E_{A}}{italicnkT})

V_{OC} = \frac{E_{A}}{q} - \frac{nkT}{q} ln ((), \frac{J_{00}}{J_{SC}}) .

…”

Section: Methodsmentioning

confidence: 99%

Enhancement of photovoltaic performances of Cu (In,Ga)(S,Se)₂ solar cell through combination of heat‐light soaking and light soaking processes

Chantana

Kato

Sugimoto

et al. 2018

Progress in Photovoltaics

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“…Thin CdS (10 nm) was consequently inserted between CIGSSe absorber and ZnS(O,OH) buffer layer to reduce the sputtering damage, thus leading to the CIGSSe solar cell with structure (4) in Figure . Moreover, the Zn 1 − x Mg x O has been demonstrated as a suitable buffer layer in CIGSSe solar cells instead of traditional ZnO buffer layer . Therefore, Zn 0.79 Mg 0.21 O was used as the buffer layer, thereby resulting in the fabrication of the CIGSSe solar cell with structure (5) in Figure , where [Mg]/([Mg] + [Zn]) of 0.21 was proofed to be the most suitable, which will discussed elsewhere.…”

Section: Resultsmentioning

confidence: 99%

“…[14][15][16][17] In addition, the utilization of (Cd,Zn)S as the buffer layer in the CIGSe solar cell resulted in the increase in the η as compared with the solar cell with the traditional CdS buffer layer because of the enhancement of photocurrent generation at short wavelength (<520 nm). 11 Moreover, Zn 1 − x Mg x O, prepared by magnetron sputtering, has been demonstrated as an appropriate buffer layer in CIGSe solar cells instead of ZnO buffer layer, 10,[18][19][20] where E g of Zn 1 − x Mg x O is larger than that of ZnO, thus decreasing the absorption loss at the short wavelength.…”

Section: Introductionmentioning

confidence: 99%

Heterointerface recombination of Cu(In,Ga)(S,Se)₂‐based solar cells with different buffer layers

Chantana

Kato

Sugimoto

et al. 2017

Progress in Photovoltaics

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Cu(In,Ga)(S,Se)2 solar cell is high conversion efficiency (η) thin‐film solar cell. One of the methods to further increase the η is to replace traditional CdS/ZnO buffer layers by more transparent materials to enhance carrier generation in spectral region from 330 to 550 nm. Cd0.75Zn0.25S/ZnO, thin CdS/ZnS(O,OH)/ZnO, and thin CdS/ZnS(O,OH)/Zn0.79Mg0.21O buffer layers are therefore developed to replace the traditional CdS/ZnO buffer layers in Cu(In,Ga)(S,Se)2‐based solar cells. ZnO, Zn0.79Mg0.21O, and ZnO:Al are prepared by sputtering method. Low‐surface carrier recombination, caused by low sputtering damage, is observed in the solar cells with CdS/ZnO or Cd0.75Zn0.25S/ZnO buffer layers, while the highest surface carrier recombination is presented in the solar cell with ZnS(O,OH)/ZnO buffer layer. Therefore, thin CdS/ZnS(O,OH)/ZnO or Zn0.79Mg0.21O buffer layers are applied in the solar cells to decrease surface recombination (reduced sputtering damage). Ultimately, conversion efficiencies of the solar cells with Cd0.75Zn0.25S/ZnO, thin CdS/ZnS(O,OH)/ZnO, and thin CdS/ZnS(O,OH)/Zn0.79Mg0.21O buffer layers are enhanced to 19.61, 18.60, and 18.81%, respectively, which are higher than that of 18.32% for the solar cell with the traditional CdS/ZnO buffer layers.

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“…It also points out that, the diffusion of cadmium in the absorber provides positive effects [1,4]. The presence of the buffer layer is expected to reduce interface and bulk recombination and ameliorate the performances of the cell [5]. Generally, other parameters such as temperature, series (R S ) and shunt (R Sh ) resistances are D DAVID PUBLISHING also factors limiting the performance of CIGS solar cells.…”

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confidence: 99%

Numerical Simulation of Cu(In,Ga)Se2 Solar Cells Performances

Oubda¹,

Kébré²,

Zougmoré³

et al. 2015

JEPE

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This paper presents a numerical characterization of copper-indium-gallium-diselenide thin film solar cells using one dimensional simulation program (SCAPS-1D). We have performed an optimization of the performances of the standard Mo/Cu(In,Ga)Se 2 /CdS/ZnO solar cells using current-voltage and quantum efficiency methods. With a CuIn 0.7 Ga 0.3 Se 2 absorber, we have investigated the buffer layer thickness, temperature, series and shunt resistances effects on the open-circuit voltage, short-circuit current density, fill factor, conversion efficiency and quantum efficiency. The simulated results show good performances when the thickness of the buffer layer is in the range of 10-40 nm due to the reduction of absorption in the short wavelenghts (380-500 nm). High performances of the model is obtained when the series and shunt resistances is in the range of 0.1-1 Ω·cm² and 1,000 Ω·cm², respectively. Under these conditions, the cell can theoretically operate under an ambiant temperature of 370 K without any loss of its performances.

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Analysis of heterointerface recombination by Zn1−xMgxO for window layer of Cu(In,Ga)Se2 solar cells

Cited by 78 publications

References 5 publications

Enhancement of photovoltaic performances of Cu (In,Ga)(S,Se)₂ solar cell through combination of heat‐light soaking and light soaking processes

Enhancement of photovoltaic performances of Cu (In,Ga)(S,Se)₂ solar cell through combination of heat‐light soaking and light soaking processes

Heterointerface recombination of Cu(In,Ga)(S,Se)₂‐based solar cells with different buffer layers

Numerical Simulation of Cu(In,Ga)Se2 Solar Cells Performances

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Analysis of heterointerface recombination by Zn1−xMgxO for window layer of Cu(In,Ga)Se2 solar cells

Cited by 78 publications

References 5 publications

Enhancement of photovoltaic performances of Cu (In,Ga)(S,Se)2 solar cell through combination of heat‐light soaking and light soaking processes

Enhancement of photovoltaic performances of Cu (In,Ga)(S,Se)2 solar cell through combination of heat‐light soaking and light soaking processes

Heterointerface recombination of Cu(In,Ga)(S,Se)2‐based solar cells with different buffer layers

Numerical Simulation of Cu(In,Ga)Se2 Solar Cells Performances

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Enhancement of photovoltaic performances of Cu (In,Ga)(S,Se)₂ solar cell through combination of heat‐light soaking and light soaking processes

Enhancement of photovoltaic performances of Cu (In,Ga)(S,Se)₂ solar cell through combination of heat‐light soaking and light soaking processes

Heterointerface recombination of Cu(In,Ga)(S,Se)₂‐based solar cells with different buffer layers