Analysis of HfO₂ Charge Trapping Layer Characteristics After UV Treatment

Abstract

The improvement in the charge storage characteristics in a non-volatile memory (NVM) device employing an ultraviolet (UV)-treated hafnium oxide (HfO2) layer as the charge-trapping layer is reported. X-ray photoelectron spectroscopy analysis was performed to characterize the Hf 4f and O 1s peaks. The defect densities corresponding to Hf and O after short-term UV treatment are 24.74% and 14.16%, respectively. The electrical characteristics, such as the interface trap density (Dit), dielectric constant, and flat band voltage (VFB), of single HfO2 thin films were determined via capacitance vs voltage (C–V) measurements of the fabricated metal–oxide–semiconductor (MOS) capacitors. Notably, this memory device has a maximum ΔVth of 4.10 V at 15 V, which corresponds to a 33.4% improvement in memory storage characteristics compared to those of an as-deposited HfO2 thin film-based memory. In addition, the charge retention after 10 years is 80.22%, which is superior to that of the as-deposited case. These results demonstrate the possibility of realizing high-efficiency TFT NVM devices using high-K materials, and are expected to enable further research on semiconductor devices using high-K materials as well as next-generation memory semiconductors using UV treatment.

Ultra-Power-Efficient Electrically Programmable Photonic Memory on a Heterogeneous III-V/Si Optical Computing Platform

“…The electron dispersive spectroscopy (EDS) line scans below the TEM images also indicate minimal atomic/interfacial changes. It has been demonstrated that CTM cells exhibit charge retention times over 10 years [92][93][94] . = 1.6, 6.2, 0.25, 29.8 pm, respectively.…”

Challenges to Optimize Charge Trapping Non-Volatile Flash Memory Cells: A Case Study of HfO2/Al2O3 Nanolaminated Stacks

“…For example, the charge storage characteristics could be significantly boosted by proper treatments, e.g., annealing steps, UV irradiation, etc. [18][19][20]. Doping/mixing with other elements was a very efficient way to modify the density and spatial and energy location of electrically active defects.…”

Solution-processed zirconium acetylacetonate charge-trap layer for multi-bit nonvolatile thin-film memory transistors

“…However, there is a high possibility of charge leakage due to the small conduction band barrier at the Si 3 N 4 /SiO 2 interface. Therefore, extensive research is currently being conducted on high -k dielectrics such as the metal oxides (Ta 2 O 5 [ 1 ], TiO 2 [ 5 ], HfO 2 [ 6 ], ZrO 2 [ 7 ]) as charge trap layers, because of the higher conduction band barrier at the interface with SiO 2 compared to the Si 3 N 4 for better charge retention.…”