Analysis of highly doping with boron from spin-on diffusing source

An experimental study of solid source diffusion by spin on dopants and its application for minimal silicon-on-insulator CMOS fabrication

“…[2][3][4][5] In such minimal MOSFET fabrications, the solid source diffusion by spin on dopants (SOD) was used to the formation of source-drain (SD) regions because the minimal I=I machine is under development as mentioned before. [6][7][8][9][10][11][12][13] Recently, the traditional solid source doping by using the thin dopant source layers formed by chemical vapor deposition (CVD) and atomic layer deposition (ALD) has received considerable attention as a shallow junction formation technique in the scaled fin-type double gate MOSFET (FinFET) fabrications thanks to its damage-free doping. [14][15][16][17][18][19][20][21][22][23] However, the SOD thermal diffusion in ultrathin silicon-oninsulator (SOI) wafers has not been investigated sufficiently.…”

Design, Fabrication, Modeling and Characterization of Electrostatically-Actuated Silicon Membranes

“…This was approached by first determining what device thicknesses could reasonably be achieved, and then Eq. literature review revealed that heavily boron-doped silicon was commonly used as an etch stop to fabricate thin structures [20], and that a boron concentration of ~5*10…”

“…A literature review yielded inconsistent accounts of boron etch-stop behavior; specifically, the reported boron concentration required for etch-stop behavior ranged from 1*10 19 atoms/cm 3 to 2*10 20 atoms/cm 3 [20][21][23][24][25][26]. Additionally, very little literature was found which discussed heavily doping silicon from spin-on boron sources; ion implantation and gas-phase doping were commonly used in the literature.…”