Analysis of highly efficient perovskite solar cells with inorganic hole transport material

Abstract

Organo-halide perovskites in planar heterojunction architecture have shown considerable promise as efficient light harvesters in solar cells. We carry out a numerical modeling of a planar lead based perovskite solar cell (PSC) with Cu2ZnSnS4 (CZTS) as the hole transporting material (HTM) using the one-dimensional solar cell capacitance simulator (SCAPS-1D). The effects of numerous parameters such as defect density, thickness, and doping density of the absorber layer on the device performance are investigated. The doping densities and electron affinities of the electron transporting material (ETM) and the HTM are also varied to optimize the PSC performance. It has been observed that a thinner absorber layer of ∼220 nm with a defect density of 1014 cm−3 compared to the reference structure improves the device performance. When doping density of the absorber layer increases beyond 2 × 1016 cm−3, the power conversion efficiency (PCE) reduces due to enhanced recombination rate. The defect density at the absorber/ETM interface reduces the PCE as well. Considering a series resistance of 5 Ω · cm2 and all the optimum parameters of absorber, ETM and HTM layers simultaneously, the overall PCE of the device increases significantly. In comparison with the reference structure, the PCE of the optimized device has been increased from 12.76% to 22.7%, and hence the optimized CZTS based PSC is highly efficient.

Effects of sub-picosecond direct laser interference patterning on the optoelectronic properties of fluorine-doped tin oxide thin films

“…On the other hand, the value found for 1/ α differs significantly from the results of previous investigations (1/ α @1030nm ∼2–10 μm). 46–48 A possible explanation for the lower value obtained in this study might be related to the non-linear response of FTO towards sub-ps IR laser radiation. Previous research indicated that the presence of non-linear effects is a phenomenon worth considering on TCO thin films when ultrashort pulsed lasers are used.…”

Non-peripherally octaalkyl-substituted nickel phthalocyanines used as non-dopant hole transport materials in perovskite solar cells*

“…Hybrid organicinorganic perovskites solar cells (PSCs) have drawn consideration attention due to the potential of achieving even higher efficiencies and low fabrication cost. [1][2][3] In the last decade, the power conversion efficiencies (PCEs) of the PSCs increased rapidly from 3.8% in 2009 [4] to a certified 25.5% in 2020, [5] making this new photovoltaic technology more and more commercially attractive. As a necessary part of PSCs, hole transport layers (HTLs) play a vital role in enhancing hole extraction and transport, reducing charge carrier recombination, and protecting the perovskite layer from the moisture invasion, which is of great importance to obtain a PSC with high efficiency and good stability.…”

“…[9,19] Also, alkyl groups increase hydrophobic nature of thin films, which would be more beneficial for the impedance of moisture ingress. [9,15] On the other hand, substitution positions at MPc ring may also play an important role in the properties that the MPc compound possess [22,26] Since a typical MPc molecule is composed of four isoindole moieties linked by a ring of nitrogen atoms [27] there are two positions available at the phenyl rings, to which substituents can be incorporated, namely peripheral position (2,3,9,10,16,17,23,24) and non-peripheral position (1,4,8,11,15,18,22,25). [28] The substitutions at different positions have been found to significantly affect the intrinsic properties of the MPc compounds, including optical, electronic and chemical properties, as well as aggregation behavior in solid state.…”

Remarkable performance optimization of inverted p-i-n architecture perovskite solar cell with CZTS as hole transport material

“…Furthermore, Solar Cell Capacitance Simulator (SCAPS) was used by many researchers for the simulation of n-i-p PSCs [6][7][8] while little work was found in literature in terms of device fabrication and performance optimization for p-i-n PSCs with any simulation tool. For example, device modelling of n-i-p type PSC was performed with CZTS as HTM in which eleven parameters were optimized to achieve PCE of 22.7 % [37]. Experimentally, it is very difficult to J o u r n a l P r e -p r o o f optimize such number of parameters in the same device.…”