Analysis of Hot-Carrier Luminescence for Infrared Single-Photon Upconversion and Readout

Abstract

Abstract-We propose and analyze a new method for singlephoton wavelength up-conversion using optical coupling between a primary infrared (IR) single-photon avalanche diode (SPAD) and a complementary metal oxide semiconductor (CMOS) silicon SPAD, which are fused through a silicon dioxide passivation layer. A primary IR photon induces an avalanche in the IR SPAD. The photons produced by hot-carrier recombination are subsequently sensed by the silicon SPAD, thus, allowing for on-die data processing. Because the devices are fused through their passivation layers, lattice mismatch issues between the semiconductor materials are avoided. We develop a model for calculating the conversion efficiency of the device, and use realistic device parameters to estimate up to 97% upconversion efficiency and 33% system efficiency, limited by the IR detector alone. The new scheme offers a low-cost means to manufacture dense IR-SPAD arrays, while significantly reducing their afterpulsing. We show that this high-speed compact method for upconverting IR photons is feasible and efficient.Index Terms-Avalanche photodiodes, single photon detectors, wavelength upconversion.

Invited Review Article: Single-photon sources and detectors

“…356 The scheme uses the fact that while an incoming IR photon triggers an avalanche, that avalanche itself results in the emission of other photons that may be visible. A Si SPAD registers these secondary photons, so effectively the system works by up conversion from the IR to the visible.…”

Current–voltage characteristics and increase in the quantum efficiency of three-terminal gate and avalanche-based silicon LEDs

“…In general, the mechanisms most widely used to explain the hot-carrier induced photon emission phenomenon are as follows [17]:…”