Analysis of implantation-induced damage and amorphization of GaSb

Abstract

(100)‐oriented GaSb crystalline wafers were implanted by 2 MeV N+ ions with doses from 1 × 1013 to 1 × 1015 cm−2. The radiation damage was characterized by spectroscopic ellipsometry (SE) and Rutherford backscattering spectrometry in combination with channeling (RBS/C). The critical dose between 1 × 1014 and 3 × 1014 cm−2 was determined. The SE data were fitted with the effective medium approximation (EMA) model, and RBS/C data were analyzed by numerical integration. Both give coinciding quantitative knowledge on the radiation damage.