Analysis of interface roughness in strained InGaAs/AlInAs quantum cascade laser structures (λ ∼ 4.6 μm) by atom probe tomography

Knipfer, B.; Xu, Shining; Kirch, Jeremy; Botez, D.; Mawst, Luke J.

doi:10.1016/j.jcrysgro.2022.126531

Cited by 14 publications

(2 citation statements)

References 12 publications

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“…Thermal resistance is important for many new fields, such as light-emitting diodes [1,2], quantum cascade lasers [3,4], phase-change memory [5,6], thermoelectric devices [7,8], wearable devices [9], and photovoltaic cells [10,11]. Lastly, thermal dissipation in batteries plays a crucial role [12].…”

Section: Introductionmentioning

confidence: 99%

Investigating the Thermal Conductance of the Cu/Si Interface Using the Molecular Dynamics Method

Liu,

Zhi,

Song

et al. 2024

Metals

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Investigating thermal transport at the Cu/Si interface holds significant importance, as understanding interface thermal conductance is crucial for enhancing materials interface thermal management, designing thermal interface materials, and improving the performance of thermoelectric devices. In this study, we conducted molecular dynamics simulations in conjunction with the Green–Kubo relation to calculate the thermal conductance of the Cu/Si interface. We successfully obtained Cu/Si interface potentials using the lattice inversion method. Our findings revealed that the thermal conductance of the Cu/Si interface is notably influenced by the interface structure. Specifically, the thermal conductance of the Cu(001)/Si(001) interface and the Cu(111)/Si(111) interface are similar, and both are higher than that of the Cu(110)/Si(110) interface. Furthermore, through first-principles calculations of the adhesion energy, we discovered that interface binding strength plays a critical role in determining interface thermal transport properties, and the influence of pressure was also discussed. This study contributes not only to the understanding of the thermal transport mechanisms at the Cu/Si interface but also provides important insights for designing novel interface materials.

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Section: Introductionmentioning

confidence: 99%

Investigating the Thermal Conductance of the Cu/Si Interface Using the Molecular Dynamics Method

Liu,

Zhi,

Song

et al. 2024

Metals

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“…For example, atom probe tomography (APT) has recently been adapted to study epitaxial interfaces in the Si-Ge material system and was used to determine all relevant structural parameters [12][13][14]. Besides, APT studies on the roughness of interfaces and layer thickness in strained (Ga,In)As/(Al,In)As superlattices and QCLs, respectively, are also available [15,16]. In all these cases, the tomography investigations have been correlated with scanning transmission electron microscopy (STEM) or high-resolution x-ray diffraction results.…”

Section: Introductionmentioning

confidence: 99%

Interface tomography of GaInAs/AlInAs quantum cascade laser active regions

Paysen

Schütt

Michler

et al. 2023

Semicond. Sci. Technol.

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We present a high-resolution electron tomography study of buried ultra-thin layers and their interfaces from the active region of a (Ga,In)As/(Al,In)As quantum cascade laser (QCL) test structure. Using a high-angle annular dark-field scanning transmission electron microscopy image series, a three-dimensional (3D) reconstruction of the complex layer structure is obtained. From this 3D information, we determine quantitative values for the chemical width and, simultaneously and independently, the root mean square roughness (rms) and lateral correlation length of the individual interfaces of a cascade using topographic height maps. The interfacial widths are comparably small for all interfaces within a cascade and the layer thicknesses show only a small standard deviation of less than one monolayer. The rms roughness is systematically lower at the direct (Ga,In)As-on-(Al,In)As interface compared to its inverse. In addition, using the one-dimensional height-height correlation function, different lateral correlation lengths along the two perpendicular 〈011〉 in-plane directions are detected indicating a distinct anisotropy of the interface morphology. Our accurate and comprehensive results on the QCL test structure will serve as feedback to evaluate the growth process and help to assess the performance of corresponding future laser devices in detail.

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Interfacial characteristics dependence on interruption times in InGaAs/InAlAs superlattice grown by molecular beam epitaxy

Lee,

Seo,

Shin

et al. 2024

Journal of Alloys and Compounds

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Analysis of interface roughness in strained InGaAs/AlInAs quantum cascade laser structures (λ ∼ 4.6 μm) by atom probe tomography

Cited by 14 publications

References 12 publications

Investigating the Thermal Conductance of the Cu/Si Interface Using the Molecular Dynamics Method

Investigating the Thermal Conductance of the Cu/Si Interface Using the Molecular Dynamics Method

Interface tomography of GaInAs/AlInAs quantum cascade laser active regions

Interfacial characteristics dependence on interruption times in InGaAs/InAlAs superlattice grown by molecular beam epitaxy

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