Analysis of intermodulation distortion in GaAs/AlGaAs HBT's

Teeter, D.A.; Karaküçük, M.; East, J.R.; Haddad, G.I.

doi:10.1109/mwsym.1992.187962

Cited by 4 publications

(2 citation statements)

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“…; referring back to Section III-C.2, recall (33) and 35, and note that these expressions essentially represent the distortion and outputintercept point as , and that they are both governed by , the sole determinant of cancellation in the second-order case. Thus, neglecting the last two terms in the denominator of (51), the output-intercept point becomes (53) This result predicts that will become a constant at sufficiently high frequencies, and is hence consistent with previous experimental observations [10, p. 445], [33,Fig. 4].…”

Section: Discussionmentioning

confidence: 99%

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A theory of high-frequency distortion in bipolar transistors

Vaidyanathan

Iwamoto

Larson

et al. 2003

IEEE Trans. Microwave Theory Techn.

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High-frequency distortion in bipolar transistors is examined by using the charge-control approach of Poon and Narayanan to connect the device's distortion behavior to its "loaded" unity-current-gain frequency (^). The resulting expressions for the distortion reveal considerable information on its frequency and bias dependence. Points on the^versus collector current curve yielding optimum distortion performance are identified and interpreted in terms of current cancellation. Both second-and third-order distortion are considered, and the results are validated by both simulation and experiment.

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Section: Discussionmentioning

confidence: 99%

“…When both (26) and (31) are satisfied, the high-frequency value of that follows from (27) is (33) Since the fundamental output at high frequencies can be written as…”

Section: High-frequency Distortion 1) Simulationmentioning

confidence: 99%