Analysis of ionizing radiation induced damage in charge coupled devices

Roy, F.; Vandekerckhove, M.; Thenoz, Y.; Commère, B.; Baratier, L.

doi:10.1109/radecs.1991.213580

. RADECS 91 First European Conference on Radiation and Its Effects on Devices and Systems

DOI: 10.1109/radecs.1991.213580

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Analysis of ionizing radiation induced damage in charge coupled devices

F. Roy

M. Vandekerckhove

Y. Thenoz

et al.

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Comparative evolution of various CCD image sensors hardening techniques with ionizing radiation

Caranhac¹,

Coutures²

RADECS 93. Second European Conference on Radiation and Its Effects on Components and Systems (Cat. No.93TH0616-3)

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This paper reviews various techniques to harden Charge Coupled Device (CCD) sensors and the results after irradiation of three Thomson n buried channel CCDs having a different degree of hardening. It describes the major irradiation effects on CCD performances and it makes a comparison of the results between the different hardening levels. It shows good results on dark voltage after ionizing radiation for TH 7863M device hardened both by design and by operating conditions (MPP mode) with respect to the standard device TH 7863A.The irradiations were performed with 6oCo or X-ray (10 keV) sources on devices in operating mode.

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Comparative evolution of various CCD image sensors hardening techniques with ionizing radiation

Caranhac¹,

Coutures²

RADECS 93. Second European Conference on Radiation and Its Effects on Components and Systems (Cat. No.93TH0616-3)

View full text Add to dashboard Cite

show abstract

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Analysis of ionizing radiation induced damage in charge coupled devices

Cited by 1 publication

References 2 publications

Comparative evolution of various CCD image sensors hardening techniques with ionizing radiation

Comparative evolution of various CCD image sensors hardening techniques with ionizing radiation

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