Analysis of LDMOS for Effect of Fingers, Device-Width and Inductance (Load) on Reverse Recovery

Abstract

This work demonstrates the effect of fingers, device-width and inductance on reverse recovery of LDMOS by unclamped inductive switching (UIS) circuit simulation for two dimensional (2D) and three dimensional (3D) devices. All the observations have been done for maximum pulse width at which device pass under UIS test. For UIS simulations the failure criteria is taken as the device temperature reaching a critical value of 650K. It has been shown that reverse recovery charge (Qrr) increased linearly with number of fingers, device width and inductance.