Analysis of Low Dose Rate Effects on Parasitic Bipolar Structures in CMOS Processes for Mixed-Signal Integrated Circuits

Kruckmeyer, Kirby; Prater, J.S.; Brown, B.S.; Trinh, Thang

doi:10.1109/tns.2011.2116041

Cited by 16 publications

(9 citation statements)

References 25 publications

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“…The observed non-monotonic trend in the bandgap voltage is mainly associated with the variations of both the gain and the leakage current in the bipolar transistors. Similar behaviors have been reported by other works [25], [26]. There is also certain dependence with the dose rate [27], which tends to increase the step effect when switching to a higher dose rate.…”

Section: N-supporting

confidence: 88%

CMOS Rad-Hard Front-End Electronics for Precise Sensors Measurements

Sordo-Ibáñez

Piñero-García

Muñoz-Díaz

et al. 2016

IEEE Trans. Nucl. Sci.

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This paper reports a single-chip solution for the implementation of radiation-tolerant CMOS front-end electronics (FEE) for applications requiring the acquisition of base-band sensor signals. The FEE has been designed in a 0.35 µm CMOS process, and implements a set of parallel conversion channels with high levels of configurability to adapt the resolution, conversion rate, as well as the dynamic input range for the required application. Each conversion channel has been designed with a fully-differential implementation of a configurable-gain instrumentation amplifier, followed by an also configurable dual-slope ADC (DS ADC) up to 16 bits. The ASIC also incorporates precise thermal monitoring, sensor conditioning and error detection functionalities to ensure proper operation in extreme environments. Experimental results confirm that the proposed topologies, in conjunction with the applied radiation-hardening techniques, are reliable enough to be used without loss in the performance in environments with an extended temperature range (between-25 and 125 ºC) and a total dose beyond 300 krad. Index Terms-nuclear instrumentation and measurement; space applications; CMOS mixed-signal ASICs; front-end electronics; RHBD; dual-slope ADC.

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Section: N-supporting

confidence: 88%

CMOS Rad-Hard Front-End Electronics for Precise Sensors Measurements

Sordo-Ibáñez

Piñero-García

Muñoz-Díaz

et al. 2016

IEEE Trans. Nucl. Sci.

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“…The conclusion can be obtained through comparing experimental results of above-mentioned two identical device sets. Since some electronic devices exhibit ELDRS (enhanced low dose rate sensitivity) [5], TID tests of the microprocessor at different dose rates are performed. Table I shows functional failure thresholds at four dose rates, and the TID effects nearly have no differences at dose rates from 9.4 rad(SiO 2 )/s to 50 rad(SiO 2 )/s.…”

Section: Test Descriptionmentioning

confidence: 99%

Radiation effect in CMOS microprocessor exposed to intense mixed neutron and gamma radiation field

Jin

Yang

et al. 2013

2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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“…This family of ADCs uses the same basic folding architecture with calibration and is on the Texas Instruments CMOS9X process. Previous testing on this process has shown that it does not have Enhanced Low Dose Rate Sensitivity (ELDRS) [3].…”

Section: Product Descriptionmentioning

confidence: 99%

“…All irradiations were done with a Cobalt-60 source at a dose rate of 103 rad(Si)/s. Low dose rate testing was not performed as TM1019 does not require it for CMOS products and because the wafer process used was previously shown not to have ELDRS [3]. During irradiation, the DUTs were powered up using the maximum operating supply voltage (2 V).…”

Section: Product Descriptionmentioning

confidence: 99%