2003
DOI: 10.15407/spqeo6.02.121
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Analysis of luminescence method applicability for determination of Cd1-xZnxTe composition

Abstract: Physical fundamentals are analyzed for the method of determination of Cd 1-x Zn x Te composition x from measurements of the luminescence band peak position, emission being caused by annihilation of bound exciton shallow neutral acceptor complexes at 4.2 K. Found are the conditions when application of the method discussed enables to obtain reliable x values.

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Cited by 5 publications
(10 citation statements)
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“…2a and [6]) 1 , and m hν = (1.590 + 0.445х + 0.339х 2 ) eV (2) as was found when studying the excitonic luminescence spectra of Cd 1-x Zn x Te crystals (see Fig. 2b and [8]) 2 .…”
Section: Introductionsupporting
confidence: 63%
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“…2a and [6]) 1 , and m hν = (1.590 + 0.445х + 0.339х 2 ) eV (2) as was found when studying the excitonic luminescence spectra of Cd 1-x Zn x Te crystals (see Fig. 2b and [8]) 2 .…”
Section: Introductionsupporting
confidence: 63%
“…Further we consider that the pointed A 0 X, D 0 X and X induced emission bands could be the only ones observed in the 4.2 K excitonic luminescence spectrum of Cd 1-x Zn x Te. This is valid for Cd 1-x Zn x Te compounds (0< x <1), see, for example, Fig.1 and [2,8,11]. Therefore, to find the x value by using the discussed luminescence method one must separate the A 0 X induced emission band in Cd 1-x Zn x Te emission spectra.…”
Section: Introductionmentioning
confidence: 97%
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