Analysis of memristors with nonlinear memristance versus state maps

Biolek, Zdeněk; Biolek, Dalibor; Biolková, Viera; Kolka, Zdenek; Ascoli, Alon; Tetzlaff, Ronald

doi:10.1002/cta.2314

Cited by 8 publications

(2 citation statements)

References 55 publications

(129 reference statements)

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“…The nonlinearity in the I – V results during positive bias suggested that the Ag/Melanin/SS memristive device is a highly nonlinear device. Such kind of nonlinearity is useful for the development of analog circuits, selector devices for crossbar memory application and chaotic circuits based on memristive devices. In addition to this, an anomalous negative differential resistance (NDR) effect is observed during the SET process, as shown in Figure b.…”

Section: Resultsmentioning

confidence: 99%

An Organic Bipolar Resistive Switching Memory Device Based on Natural Melanin Synthesized From Aeromonas sp. SNS

Gurme

Dongale

Surwase

et al. 2018

Physica Status Solidi (a)

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A Ag/melanin/SS memristive device with remarkably good endurance and retention properties is demonstrated using natural melanin isolated from bacterium Aeromonas sp. SNS. Purified and characterized melanin is used for the development of a non‐volatile memory device. The device is operated under electroforming‐free mode and requires only ±0.6 V resistive switching voltage. 2 × 104 switching cycles endurance is achieved with an approximately 10X memory window at 0.2 V read voltage. In addition to this, the low resistance state (LRS) and high resistance state (HRS) are stable over 103 s without any observable degradation in the resistance states. Standard deviation and coefficient of variation of LRS and HRS are very small compared to other memory devices reported in the literature. Furthermore, the Ag/melanin/SS memristive device shows rich nonlinear behavior and possesses negative differential resistance effect during positive bias. Charge transportation in the device is due to the ohmic and space charge limited current. The formation and breaking of the conductive filament are responsible for the bipolar resistive switching effect due to hybrid electronic‐ionic charge transportation. Rich I–V characteristics, very low switching voltage, and remarkable nonvolatile memory performance make melanin a strong candidate for next generation organic non‐volatile memory devices.

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Section: Resultsmentioning

confidence: 99%

An Organic Bipolar Resistive Switching Memory Device Based on Natural Melanin Synthesized From Aeromonas sp. SNS

Gurme

Dongale

Surwase

et al. 2018

Physica Status Solidi (a)

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“…There are also new papers by Biolek et. al [22,23], in which they solve some problems caused by SPICE programs, in terms of representation of very large numbers.…”

Section: Fig 2 Graphical Representation Of the Memristor Modelmentioning

confidence: 99%

Comparison of memristor models for microwave circuit simulations in time and frequency domain

Marković¹,

Potrebić²,

Tošić³

et al. 2019

FACTA U EE

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As reported in the open literature, there are many memristor models for the circuit-level simulations. Some of them are not particularly suitable for microwave circuit simulations. At RF/microwave frequencies, the memristor dynamics become an important issue for the transition process. In this paper we present a number of different SPICE memristor model groups. Each group is explained using representative models, which are analysed and compared from the microwave circuit analysis viewpoint. We consider the model behaviour at RF/microwave frequencies and the memristance setting issues. Results are compared and the best models are recommended.

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Wave digital emulation of general memristors

Solan

Ochs

2018

Circuit Theory & Apps

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SummaryMemristive devices are nonlinear resistors with memory. Due to the memory effect, those devices are potential candidates for self‐organizing circuits capable of learning from environmental influences in the past. The complexity of single devices with memory in combination with the required huge number of these devices in circuits including them make preinvestigations based on simulations very inefficient and time‐consuming. Flexible and real‐time capable memristive emulators, which can directly be incorporated into real circuits, can overcome this problem.In our approach, we introduce a general memristor emulator based on wave digital principles. The proposed emulator is flexible, robust, efficient, and it preserves the passivity of the real device in a digital signal‐processing sense. All these properties result in a reusable emulator, independent of a particular application. This work lists the wave digital emulations of different models from ideal to extended memristors. As an example for an extended memristor, the wave digital emulation of a double barrier memristive device is demonstrated.

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Analysis of memristors with nonlinear memristance versus state maps

Cited by 8 publications

References 55 publications

An Organic Bipolar Resistive Switching Memory Device Based on Natural Melanin Synthesized From Aeromonas sp. SNS

An Organic Bipolar Resistive Switching Memory Device Based on Natural Melanin Synthesized From Aeromonas sp. SNS

Comparison of memristor models for microwave circuit simulations in time and frequency domain

Wave digital emulation of general memristors

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