Analysis of metal routing technique in a novel dual direction multi-finger SCR ESD protection device

Du, Xin; Yan, Dong; Liou, Juin J.

doi:10.1109/icsict.2008.4734540

Cited by 5 publications

(1 citation statement)

References 3 publications

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“…For SCR type devices with a smaller turn-on resistance and highest ESD current conduction capability per unit, the robustness of metal connection from the PADs to the anode and cathode of SCR device will be critical in the development of an optimized ESD discharging structure [14][15][16]. Regarding the conventional DCSCR structure, as shown in Figure 5a, the metal connections of PADs and anode/cathode have been split into six metal fingers by the metal connections between the anode gate and cathode gate since both metal connections used metal2.…”

Section: Layout Design Of Proposed Ertscrmentioning

confidence: 99%

Area-Efficient Embedded Resistor-Triggered SCR with High ESD Robustness

Hou

Yang

et al. 2019

Electronics

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The trigger voltage of the direct-connected silicon-controlled rectifier (DCSCR) was effectively reduced for electrostatic discharge (ESD) protection. However, a deep NWELL (DNW) is required to isolate PWELL from P-type substrate (PSUB) in DCSCR, which wastes part of the layout area. An area-efficient embedded resistor-triggered silicon-controlled rectifier (ERTSCR) is proposed in this paper. As verified in a 0.3-μm CMOS process, the proposed ERTSCR exhibits lower triggering voltage due to series diode chains and embedded deep n-well resistor in the trigger path. Additionally, the proposed ERTSCR has a failure current of more than 5 A and a corresponding HBM ESD robustness of more than 8 KV. Furthermore, compared with the traditional DCSCR, to sustain the same ESD protection capability, the proposed ERTSCR will consume 10% less silicon area by fully utilizing the lateral dimension in the deep n-well extension region, while the proposed ERTSCR has a larger top metal width.

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Section: Layout Design Of Proposed Ertscrmentioning

confidence: 99%