Analysis of mobility-limiting mechanisms of the two-dimensional hole gas on hydrogen-terminated diamond

Effects of Proton Irradiation on Hole Carrier Transport in Hydrogen-Terminated Diamond Surfaces

“…As we discussed in our previous work 15 , as well as the work by Garrido et. al 30 , it is believed that long-range potential fluctuations act as scattering centers in H:diamond, which may in turn arise from incomplete hydrogen termination.…”

“…To gain insight on the exact mechanisms degrading these properties, we turn to Hall-effect measurements to extract the hole mobility and sheet density from RT to 70 K. The measurements were swept bidirectionally from RT to 70 K, and negligible hysteresis was observed. This temperature depen- dence produced an activation behavior that provides insight into the mechanisms responsible for this degradation, which was the main thesis of our previous work 15 . Shown in Fig.…”

“…It is worth noting, however, that any degradation intrinsic to the H:diamond structure may be difficult to decouple from the electrical impact induced by the degraded oxide. This is particularly the case because the C-H bond uniformity is essential to the conduction of holes 15 . For this reason, the other two irradiated samples remained unpassivated.…”

“…First, the ionization of the penetrating protons may impart enough energy to create vacancies and interstitials throughout the diamond surface. Second, the ionization may impart enough energy to dissociate the C-H dipoles 15,18 . Both of these degradation mechanisms would create band distortions which would, in turn, scatter the conducting holes and reduce their mobility.…”

Superior p‐Type Surface Doping of Cubic Boron Nitride via MoO3 Adsorption

“…The phenomenon has been reported in H‐terminated diamond, which is caused by the surface impurity scattering by charged acceptors and surface roughness, and the long‐range potential fluctuations at the diamond surface related to the C–H dipoles. [ 43 ]…”