Analysis of Molecular Single-Electron Transistors Using Silicene, Graphene and Germanene

Abstract

By using Ab initio approach, we have analysed Silicene-, Germaneneand Graphene-based molecular single-electron transistors. It is based on non-equilibrium greens function (NGEF) and density functional theory (DFT). Three different fullerene molecules are taken and optimization is done. In Coulomb blockade regime, silicene, germanene and graphene are kept above gate dielectric between drain and source for weak coupling. We have taken gold electrodes for SET environment. Gold is widely used as metal electrode in nanoscale devices. We have calculated the HOMO and LUMO values and total energy versus gate voltage. Charge stability diagrams are obtained by calculating charging energy as function of external gate potential. By these calculations, the analysis of three different molecular single-electron transistors is done. The total energies of these molecules are highly negative (very low) compared to other molecules.

Germanium‐based monoelemental and binary two‐dimensional materials: Theoretical and experimental investigations and promising applications

“…105 In the figure, the two dotted lines are perpendicular to each other, indicating that the angle between the (0002) and (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) planes was 90 . In addition, the interlayer spacing of the multilayered germanene, directly estimated from the TEM image, was $0.197 nm, which implies that these layers were parallel to the (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) plane.…”

“…A high-magnification transmission electron microscopy (TEM) image of the final product (Figure 5C) showed that the synthesized multilayered germanene was approximately 2 nm thick with approximately 6-7 layers. The fast Fourier transform analysis of the diffraction pattern shown in Figure 5C inset reveals that the reciprocal lattice points along the blue dashed line indicate the lattice planes parallel to the (0002) plane, while those along the green dashed line represent the lattice planes parallel to the (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) plane. The interplanar spacing of (0002) and (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) were equal to $0.306 and $0.198 nm, respectively, which are consistent with the first principles results.…”

“…The fast Fourier transform analysis of the diffraction pattern shown in Figure 5C inset reveals that the reciprocal lattice points along the blue dashed line indicate the lattice planes parallel to the (0002) plane, while those along the green dashed line represent the lattice planes parallel to the (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) plane. The interplanar spacing of (0002) and (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) were equal to $0.306 and $0.198 nm, respectively, which are consistent with the first principles results. 105 In the figure, the two dotted lines are perpendicular to each other, indicating that the angle between the (0002) and (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) planes was 90 .…”

“…13 However, the difficulty in opening the bandgap of graphene and its incompatibility with silicon-based semiconductor devices limit its application in semiconductor technology. [14][15][16] Silicene and germanene, known as the cousins of graphene, exhibit HC structures similar to graphene. 17,18 However, unlike graphene, silicene/germanene is formed by sp 2 -sp 3 mixed hybridized Si/Ge atoms that are not completely located in the same plane (Figure 1B,D).…”