Analysis of nitrogen plasma generated by a pulsed plasma system near atmospheric pressure

Hayakawa, Ryoma; Yoshimura, Takeshi; Ashida, Atsushi; Fujimura, Norifumi; Kitahata, Hiroya; Yuasa, Motokazu

doi:10.1063/1.1810202

Cited by 19 publications

(21 citation statements)

References 12 publications

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“…This transition is well-known in literature. 25,26 It originates from the electronic transition of the N 2 ͑C 3 ⌸ u → B 3 ⌸ g ͒ system. The sum over the emission lines of the SPS represents the population of the C 3 ⌸ u state.…”

Section: Methodsmentioning

confidence: 99%

Efficiency enhancement of a dielectric barrier plasma discharge by dielectric barrier optimization

Meiners¹,

Leck²,

Abel

2010

Review of Scientific Instruments

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The characteristic feature of a dielectric barrier discharge (DBD) is the dielectric barrier placed between the electrodes. In the present work, the influence of the dielectric barrier to the properties of a DBD in air was investigated. Spectroscopic characterization of the DBD and electrical measurements were carried out. It was shown that the efficiency of a DBD can be considerably improved by optimizing the dielectric barrier. The dielectric material should possess an appropriate relative permittivity and thickness. For thin dielectric barriers, a high secondary emission coefficient becomes important. Additionally, the use of only one dielectric barrier is advantageous.

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Section: Methodsmentioning

confidence: 99%

Efficiency enhancement of a dielectric barrier plasma discharge by dielectric barrier optimization

Meiners¹,

Leck²,

Abel

2010

Review of Scientific Instruments

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“…We recently developed a plasma source that maintains a stable discharge in pure nitrogen even at atmospheric pressure. 6,7 We reported the formation of 1.8-nm-thick silicon nitride films at nitridation temperatures as low as 25°C, with the thickness unaffected by the temperature. 8 The excited molecular species generated through the N 2 second-positive system in this atmospheric pressure ͑AP͒ plasma show high reactivity for Si, as do atomic nitrogen species generated using rf plasma, and they play an important role in low-temperature nitridation.…”

Section: Introductionmentioning

confidence: 98%

Detailed structural analysis and dielectric properties of silicon nitride film fabricated using pure nitrogen plasma generated near atmospheric pressure

Hayakawa

Nakae

Yoshimura

et al. 2006

Journal of Applied Physics

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A detailed structural analysis and dielectric property measurements of silicon nitride films fabricated using atmospheric pressure (AP) plasma were carried out, and the results were compared to those of nitride films fabricated using a radio frequency plasma. Using AP plasma, 1.8-nm-thick silicon nitride films composed of Si3N3.5O0.7 were obtained at nitridation temperatures ranging from 25to500°C. X-ray photoelectron spectroscopy using a monochromatic AlKα source at 1486.6eV and high-resolution Rutherford backscattering spectrometry revealed approximately 10% more nitrogen atoms corresponding to the N–Si3 bond in the film using AP plasma than those using rf plasma. In the range of 25–500°C, the nitridation temperature did not affect the leakage current densities of the films fabricated using AP plasma. Films fabricated at 25°C showed leakage current density of as low as 7×10−2A∕cm2 at 5MV∕cm. This value was one order of magnitude lower than that using rf plasma. The direct-tunneling current simulation analysis with the Wentzel-Kramers-Brillouin approximation revealed that the effective tunneling mass of holes increased due to the nitrogen atoms incorporated in the films. From deep-level transient spectroscopy, signals attributed to defects generated by plasma irradiation in the silicon substrate were not observed.

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“…Their transitions correspond to N 2 second positive system ͑N 2 second ps: C 3 ⌸ u → B 3 ͚ g ͒ and N 2 Herman's infrared system ͑N 2 HIR: C 5 ⌸ g → A 5 ͚ u + ͒. 11,12 These molecular excited species were unique because atomic excited species are mainly observed in rf plasma. The nitridation and the dielectric properties of the silicon nitride films fabricated using AP plasma source were also reported elsewhere.…”

Section: Introductionmentioning

confidence: 98%

The comparison of the growth models of silicon nitride ultrathin films fabricated using atmospheric pressure plasma and radio frequency plasma

Nakae

Hayakawa

Yoshimura

et al. 2007

Journal of Applied Physics

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The reaction process model during initial nitridation of Si (111) using atmospheric pressure plasma source was constructed and it was compared to that using a radio frequency plasma source. In atmospheric pressure plasma, emission lines from the N2 second positive system were dominantly observed. By exposing the atmospheric pressure plasma to Si substrate at the temperature ranging from 25to500°C, silicon nitride films with a thickness below 1.8nm were formed. In order to study the nitridation process, the changes in the film thickness against the substrate temperature and nitridation time were systematically studied at a pressure ranging from 50to700Torr. The film thickness increases with increasing the nitridation pressure below 400Torr and it saturates above 500Torr. It was completely regardless of the substrate temperature. From the time dependence of the film thickness at various nitridation pressures, it was revealed that these experimental results were well fitted to a Langmuir-type adsorption model. In the case of nitridation using atmospheric pressure (AP) plasma, molecular species play an important role for nitridation without thermal diffusion. The difference of silicon nitride films fabricated using AP plasma and rf plasma originates from the difference in the active species.

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Analysis of nitrogen plasma generated by a pulsed plasma system near atmospheric pressure

Cited by 19 publications

References 12 publications

Efficiency enhancement of a dielectric barrier plasma discharge by dielectric barrier optimization

Efficiency enhancement of a dielectric barrier plasma discharge by dielectric barrier optimization

Detailed structural analysis and dielectric properties of silicon nitride film fabricated using pure nitrogen plasma generated near atmospheric pressure

The comparison of the growth models of silicon nitride ultrathin films fabricated using atmospheric pressure plasma and radio frequency plasma

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