Analysis of novel silicon based lateral power devices with floating substrate on insulator

Abstract

With the rapid development of the traditional inorganic semiconductor industry, the improvement of its electrical performance is gradually approaching to the limit. It is difficult to continue to improve the performance, lessen the size, and reduce the cost. Therefore, organic semiconductor materials and devices with simple process and low cost have been found and gradually become a new research hotspot. Although organic semiconductor materials and devices are developing rapidly, their electrical properties, such as carrier mobility, are considerably inferior to those of inorganic semiconductors, and their research direction and application prospect are relatively fixed and single. They are developed only in display, sensing, photoelectric conversion and other fields, but the researches on switching power devices, integrated circuits and other fields are still relatively blank. At the same time, power devices are used only in the field of inorganic semiconductors. Therefore, in order to expand the research direction of organic semiconductors and power devices at the same time, a novelsilicon on insulator lateral double-diffused metal oxide semiconductor (SOI LDMOS)power device is reported in this paper. Unlike the SOI LDMOS power devices in traditional inorganic semiconductors, this novel device can be used in the field of organic semiconductors by combining with insulated flexible substrates, which provides a new possibility for the research direction of organic semiconductors. In this paper, both simulation and experiment verify that specific on-resistance (<i>R</i><sub>ON,sp</sub>) and threshold voltage (<i>V</i><sub>TH</sub>) do not change significantly when the conventional SOI LDMOS lacks the substrate electrode, but the breakdown voltage decreases by about 15% due to the absence of the substrate electrode or the longitudinal electric field. In response to this phenomenon, in this paper proposed is a novel SOI LDMOS power device that possesses surface substrate electrodes and drift zone oxide trenches. This novel device can provide electrodes for the substrate again, optimize the horizontal and vertical electric field, and significantly change neither of the <i>R</i><sub>ON,sp</sub> and the <i>V</i><sub>TH</sub>. At the same time, the breakdown voltage (BV) of conventional SOI LDMOS is increased by 57.54%, which alleviates the adverse effects caused by the application in the field of organic semiconductors. This novel SOI LDMOS power device provides the possibility of applying traditional power semiconductors to the research of organic semiconductors, and has innovative significance for expanding the organic semiconductor research.

Design and Simulation Optimization of an Ultra-Low Specific On-Resistance LDMOS Device

“…It can be seen when L increase from 0.3 μm to 0.55μm, the depletion region increase obviously , while the depletion boundary keeps nearly no change from L= 0.55μm to L=0.65μm. Since the current path length , which is discussed in Section II, part C, is proportional to the depletion region, the result consists of equation (2)(3)(4)(5)(6). The reason for limitation at L=0.55μm is due to depletion region limitation, which is considered related to drift/body concentration, and another possible reason is that the current path length is not circular again at higher drift region.…”