2021
DOI: 10.11591/ijece.v11i5.pp3882-3889
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Analysis of on-off current ratio in asymmetrical junctionless double gate MOSFET using high-k dielectric materials

Abstract: <span>The variation of the on-off current ratio is investigated when the asymmetrical junctionless double gate MOSFET is fabricated as a SiO<sub>2</sub>/high-k dielectric stacked gate oxide. The high dielectric materials have the advantage of reducing the short channel effect, but the rise of gate parasitic current due to the reduction of the band offset and the poor interface property with silicon has become a problem. To overcome this disadvantage, a stacked oxide film is used. The potentia… Show more

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