2018
DOI: 10.1063/1.5034320
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Analysis of optical and electronic properties of MoS2 for optoelectronics and FET applications

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Cited by 32 publications
(21 citation statements)
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“…Multilayer MoS 2 has an indirect band gap of ∼1.3 eV and high visible light absorption. 43,44 Raman spectroscopy measurements of the free-standing and supported parts of the MoS 2 flake are shown in Figure 1d; the characteristic peaks of the in-plane (E 2g ) mode located at ≈384 cm −1 and the out-of-plane (A 1g ) mode located at ≈408 cm −145 indicate that the substrate-supported and free-standing MoS 2 flakes are 2H-phase. 46 Note that there is no indication of partial 2H-1T′ phase transition that has been previously reported in suspended MoS 2 monolayers.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…Multilayer MoS 2 has an indirect band gap of ∼1.3 eV and high visible light absorption. 43,44 Raman spectroscopy measurements of the free-standing and supported parts of the MoS 2 flake are shown in Figure 1d; the characteristic peaks of the in-plane (E 2g ) mode located at ≈384 cm −1 and the out-of-plane (A 1g ) mode located at ≈408 cm −145 indicate that the substrate-supported and free-standing MoS 2 flakes are 2H-phase. 46 Note that there is no indication of partial 2H-1T′ phase transition that has been previously reported in suspended MoS 2 monolayers.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…The effect of varying sulfurization temperature on the annealing of MoO 3 film has been studied in detail to obtain 2D MoS 2 films spanning a large area for nanoelectronic applications such as ferroelectric FETs (FeFET) memory (37) . Utilizing the optical properties of MoS 2 appropriately, an MoS 2 based photodetector has the ability to detect photons in the visible range (38) . MoS 2 based optoelectronic devices, when irradiated with UV -visible light, display useful properties for application in room-temperature optoelectronic NO 2 sensors.…”
Section: Applicationsmentioning
confidence: 99%
“…The nonlinear energy shift and broadening depend on the coefficients χ and χ (both real-valued), which are calculated using the results in [19,21,23,24] (see the detailed derivation in Appendix B):…”
Section: Nonlinear Oscillatormentioning
confidence: 99%
“…The nonlinear optical material, namely MoS 2 in our case, is embedded into a background material such as the hexagonal boron nitride that fills the space. The refractive index of MoS 2 at 1.06 eV is calculated through DFT method [23] to be 2.2. The refractive index of the hexagonal boron nitride is also found to be 2.2 [24].…”
Section: Appendix B Nonlinear Coefficient χ χ and Unperturbed Hamilto...mentioning
confidence: 99%