Analysis of optical emission spectroscopy in diamond chemical vapor deposition

Liao, Yongli; Li, C.H; Ye, Z.Y; Chang, Ching-Yu; Wang, G.Z; Fang, Rongchuan

doi:10.1016/s0925-9635(00)00283-1

Cited by 29 publications

(11 citation statements)

References 20 publications

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“…By contrast in an ion-activated nucleation, enhanced diffusion is promoted by energetic ions impinging the surface. As the ion energy and concentration distributions are strongly dependent on the filaments location [8,11], it is expected Fig. 3.…”

Section: Discussionmentioning

confidence: 91%

“…In this paper the influence of important nucleation parameters such as the distance between the filaments and the substrate and the substrate temperature is reported. While temperature is generally a key parameter of the nucleation by increasing the surface diffusion of atomic species, it was reported that the filaments-to-substrate distance might govern the energy and the concentration of the activated or ionized species [8]. Moreover, a direct comparison of the influence of these two parameters in the same experimental set-up might provide more insight into the true nucleation mechanism.…”

Section: Introductionmentioning

confidence: 99%

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The bias-assisted HF CVD nucleation of diamond: Investigations on the substrate temperature and the filaments location

2006

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Section: Discussionmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

The bias-assisted HF CVD nucleation of diamond: Investigations on the substrate temperature and the filaments location

2006

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“…For different species existing in an excited environment, the intensity ratio reflects their relative concentrations [32][33]. So, the intensity of a given emission line is proportional to the concentration of the species and hence the ratio of relative intensity of a Ti ion line to a Ti neutral line is proportional to the ionization ratio.…”

Section: Resultsmentioning

confidence: 99%

Spatio-temporal behavior of microwave sheath-voltage combination plasma source

Kar

Kousaka

Raja

2015

Journal of Applied Physics

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Microwave sheath-Voltage combination Plasma (MVP) is a high density plasma source and can be used as a suitable plasma processing device (e.g., ionized physical vapor deposition). In the present report, the temporal behavior of an argon MVP sustained along a direct-current biased Ti rod is investigated. Two plasma modes are observed, one is an "oxidized state" (OS) at the early time of the microwave plasma and the other is "ionized sputter state" (ISS) at the later times. Transition of the plasma from OS to ISS, results a prominent change in the visible color of the plasma, resulting from a significant increase in the plasma density, as measured by a Langmuir probe. In the OS, plasma is dominated by Ar ions and the density is order 10 11 cm -3 . In the ISS, metal ions from the Ti rod contribute significantly to the ion composition and higher density plasma (10 12 cm -3 ) is produced. Nearly uniform high density plasma along the length of the Ti rod is produced at very low input microwave powers (around 30 W). Optical emission spectroscopy measurements confirm the presence of sputtered Ti ions and Ti neutrals in the ISS.

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“…Recently, much research has been carried out for synthesizing the high quality diamond thin-films using microwave plasma enhanced chemical vapor deposition (MWPCVD) [13][14][15][16][17], radio frequency (RF), DC plasma CVD [18,19], electron cyclotron resonance (ECR) plasma CVD [20][21][22], the hot filament CVD [23,24], the ion beam deposition method (IBD) [25], laser ablation, combustion flame, etc [26][27][28]. Generally, the low pressure CVD processes for synthesis of diamond films have been used with the activating gas phase carbon-containing precursor of CH 4 .…”

Section: Introductionmentioning

confidence: 99%

Effect of Oxygen for Diamond Film Synthesis with C-Hexane in Microwave Plasma Enhanced CVD Process

Han¹

2012

Journal of Electrical Engineering and Technology

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-The purpose of this paper is to decide the optimum synthesis conditions of polycrystalline diamond films according to the ratio of gas mixture. Diamond films were deposited with cyclo-hexane as a carbon precursor by the microwave plasma enhanced chemical vapor deposition process. The optimum oxygen ratio to cyclo-hexane was reached about 125 % under the fixed 0.3% c-hexane in hydrogen. Oxygen plays a role in etching the graphitic components of carbon sp2 bond effectively. By OES measurement, the best synthesis conditions found out about 12.5 % and 15.75 %, which is the emission intensity ratios of CH(B-X) and Hβ on Hα, respectively. Also, the electron temperature was similar about 5,000 to 5,200 K in this work.

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Analysis of optical emission spectroscopy in diamond chemical vapor deposition

Cited by 29 publications

References 20 publications

The bias-assisted HF CVD nucleation of diamond: Investigations on the substrate temperature and the filaments location

The bias-assisted HF CVD nucleation of diamond: Investigations on the substrate temperature and the filaments location

Spatio-temporal behavior of microwave sheath-voltage combination plasma source

Effect of Oxygen for Diamond Film Synthesis with C-Hexane in Microwave Plasma Enhanced CVD Process

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