Analysis of Pentacene Field-Effect Transistor with a Ferroelectric P(VDF–TeFE) Gate Insulator as an Element of Maxwell–Wagner Effect System

Abstract

Analysis of pentacene field-effect transistors (FETs) with a ferroelectric gate insulator, i.e., a copolymer of vinylidene fluoride and tetrafluoroethylene [P(VDF-TeFE)], as an element of Maxwell-Wagner system revealed that the turnover of spontaneous polarization in P(VDF-TeFE) modulated the amount of charge injected from the source electrode and accumulated in the FET channel. This analysis well accounted for the hysteresis behavior observed in the I ds -V gs characteristics. Pentacene FETs using polyimide gate insulator also showed a similar hysteresis behavior in the I ds -V gs characteristics, but that the results were caused by carrier injection from the gate electrode into the polyimide gate insulator. #

Fabrication and Characterization of Ferroelectric Poly(vinylidene fluoride–tetrafluoroethylene) Gate Field-Effect Transistor Memories

“…Drain current is analyzed theoretically in ref. 8. By using the results here, we found that the voltage shift of the average of the forward and reverse drain currents depends on the trapped charge.…”

“…We have focused on P(VDF-TeFE), which is obtained easily compared with P(VDF-TrFE). An analysis of the characteristics of FET whose gate insulator is P(VDF-TeFE) has been reported, 8) but the purpose of such a study is the analysis of the turnover of spontaneous polarization in P(VDF-TeFE). Thus, no optimization of memory characteristics was described.…”

Carbon Nanotube/Graphene Nanoribbon/Polyvinylidene Fluoride Hybrid Nanocomposites: Rheological and Dielectric Properties

“…Figure b illustrates the real permittivity of the binary and hybrid nanocomposites with 2.7 wt % nanofiller content. In a CPN, all constituents, i.e., polymer matrix, conductive nanofiller, and interface, can be polarized, and their contribution to overall real permittivity depends on the frequency range. ,, In general, real permittivity in CPNs originates from different sources, interfacial polarization, dipolar and electronic polarizations of polymer matrix, and space charge polarization within nanofillers. ,, Even though all the polarization mechanisms are present at the lower frequencies (<1 MHz here), however, the role of interfacial polarization is more highlighted due to its larger scale of polarization. It has been proposed by many researchers that the formation of nanocapacitors inside CPNs is the physical phenomenon controlling the interfacial polarization. , Therefore, higher affinity of nanofillers to neighbor each other enhances the interfacial polarization.…”

“…In a CPN, all constituents, i.e., polymer matrix, conductive nanofiller, and interface, can be polarized, and their contribution to overall real permittivity depends on the frequency range. 29,97,98 In general, real permittivity in CPNs originates from different sources, interfacial polarization, dipolar and electronic polarizations of polymer matrix, and space charge polarization within nanofillers. 7,30,31 Even though all the polarization mechanisms are present at the lower frequencies (<1 MHz here), however, the role of interfacial polarization is more highlighted due to its larger scale of polarization.…”

Organic ferroelectric gate field-effect transistor memory using high-mobility rubrene thin film

“…This type of memory also has many advantages such as low cost, and FETs using a poly(vinylidene fluoride) (PVDF)-based ferroelectric polymer on Si have been reported. [1][2][3][4][5] Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer and poly(vinylidene fluoride-tetrafluoroethylene) [P(VDF-TeFE)] copolymer are well-known ferroelectric materials for memory applications, 6,7) and have been applied to many kinds of ferroelectric gate FETs prepared by combining organic semiconductor pentacene, such as P(VDF-TrFE) and pentacene, 8,9) P(VDF-TeFE) and pentacene, 10) and PVDF and pentacene. 11) In addition to the above, memory FETs with a ferroelectric copolymer gate insulator and zinc oxide semiconducting channel have been reported.…”