Analysis of planar structures by an integral approach using entire domain trial functions

Nadarassin, M.; Aubert, Hervé; Baudrand, H.

doi:10.1109/22.466185

Cited by 18 publications

(7 citation statements)

References 12 publications

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“…In addition to the two access voltage sources e 1 and e 2 , each eigenmode defined in the subdomain ⍀ is considered as a voltage excitation port. The admittance matrix [Y CIRCUIT ] of the equivalent (N ϩ 2)-port network is then computed from the IE Technique using entire domain trial functions [12].…”

Section: Derivation Of the Equivalent Network At The Scale Level Of Tmentioning

confidence: 99%

N-port network for the electromagnetic modeling of mems switches

Perret¹,

Aubert²,

Plana³

2005

Microw. Opt. Technol. Lett.

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with Battle-Lemarie scaling functions, 6 th -and 10 th -order centered differences are very close to the accuracy limit. It agrees with the theoretical evaluation.Therefore, the 6 th -order accurate method can sufficiently eliminate the numerical-dispersion error of the ADI-FDTD method, which is caused by approximating the spatial derivatives using the finite-difference method. CONCLUSIONSIn this paper, we have developed a high-order ADI-FDTD method by approximating the spatial derivatives of the ADI-FDTD method with Battle-Lemarie scaling functions and high-order centered differences. It has been proved that the method is unconditionally stable. The numerical dispersion of the high-order ADI-FDTD method with different schemes and the accuracy limit of the ADI-FDTD method for a given time-step size have been derived. It was found that the numerical dispersion is improved. In addition, it was observed that the numerical-dispersion error is very close to the accuracy limit at any mesh density when the 6 th -order centered difference is applied. ACKNOWLEDGMENTThe work described in this paper was fully supported by a grant from the Research Grants Council of the Hong Kong Special Administrative Region, China, under project no. PolyU 5131/01E. (and the references therein), this task is very challenging because MEMS exhibit generally complex geometries and critical "aspectratios". The accurate design of such circuits requires electromagnetic simulations that combines full-wave analysis (for the description of the distributed passive part of the circuits) with equivalentcircuit models (for lumped passive and active devices) [5]. Because their dimensions are much smaller than the wavelength, a MEMS switch is usually modeled by a shunt CLR lumped-element circuit derived from quasi-static analysis. However, the incorporation of such a lumped element in an electromagnetic simulator based on a spatial discretization may create an ambiguity due to the distribution of this model over the mesh [6]. An alternative electromagnetic analysis consists of applying a direct full-wave method to the overall MEMS circuit (see, for example, [7,8] for modeling of air-bridges in coplanar waveguide). But these methods are based on the spatial discretization of the whole circuit (MEMS switches included) and, consequently, require a large computer storage capability and are time-consuming as the number of switches increases. Moreover, the wide diversity of scales in MEMS circuits may generate ill-conditioned matrices in the computation of the boundary value problem.Combining the advantages of different numerical techniques' hybrid approaches has provided encouraging results for MEMS electromagnetic modeling [9]. In this paper, we propose an alternative approach named the multi-scale integral-equation (MS-IE) method. The first version of this technique has been reported recently for the modeling of planar active antennas [10,11]. An extension of this precursor is proposed here for the analysis of RF-MEMS. A coplanar-waveguide shunt MEMS switch-...

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Section: Derivation Of the Equivalent Network At The Scale Level Of Tmentioning

confidence: 99%

N-port network for the electromagnetic modeling of mems switches

Perret¹,

Aubert²,

Plana³

2005

Microw. Opt. Technol. Lett.

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“…In the case of a transistor for instance, substituting a source for another results in a change in the non-linear relationships between the voltages and currents in both the grid-source and the drain-source spaces. Furthermore, the reduction of the interdigital structure of a transistor to a simple pair of coupled sources invokes a multi-scale approach [11] and requires considerations beyond the scope of this paper. Nevertheless, in the next paragraph, some insights into this point are given as concluding remarks.…”

Section: Equivalence Between Sourcesmentioning

confidence: 99%

Equivalent circuit representation for integral formulations of electromagnetic problems

Baudrand

Bajon²

2002

Int J Numerical Modelling

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“…S-parameters are computed using a planar waveguide model and a modematching technique for a bend with arbitrary angle and Y-junction (Mehran 1978) and for T-junction (Menzel and Wol 1977). For analysis of microstrip structures with discontinuities, various other techniques such as integral formulation (Nadarassin et al 1995), edge line concept (Moon et al 1991), method of moments (MoM) (Hill and Tripathi 1991) and ®nite di erence time domain (FDTD) (Feix et al 1992) have been used. The integral method and MoM are very e cient and accurate methods, but they require a lot of analytical processing.…”

Section: Introductionmentioning

confidence: 99%

Frequency and time domain analysis of microstrip lines with multiple right-angle bend discontinuities

Datta¹,

Sanyal²,

Bhattacharya³

2002

International Journal of Electronics

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Frequency-dependent scattering matrices for the composite transmission structures of single microstrip lines having two right-angle bend discontinuities have been determined. The scattering parameters found by a mode-matching technique are used in the computations of the time domain responses for trapezoidal pulse inputs. From the time domain responses the delays, distortions and re¯ections are found. The contributions of higher-order modes, which may be signi®cant in deciding the signal¯ow behaviour in these types of transmission structure, are also identi®ed.

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Analysis of planar structures by an integral approach using entire domain trial functions

Cited by 18 publications

References 12 publications

N-port network for the electromagnetic modeling of mems switches

N-port network for the electromagnetic modeling of mems switches

Equivalent circuit representation for integral formulations of electromagnetic problems

Frequency and time domain analysis of microstrip lines with multiple right-angle bend discontinuities

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