Prospective equivalent internal quantum efficiency ͑ int ͒ of approximately 34% at 300 K was demonstrated for the blue emission peak of nonpolar m-plane ͑1100͒ In x Ga 1−x N / GaN multiple quantum well light emitting diodes ͑LEDs͒ fabricated on freestanding m-plane GaN substrates. Although the int value is yet lower than that of conventional c-plane blue LEDs ͑Ͼ70% ͒, the results encourage one to realize high performance green, amber, and red LEDs by reducing the concentration of nonradiative defects, according to the absence of the quantum-confined Stark effects due to the polarization fields parallel to the quantum well normal. The electric field component of the blue surface emission was polarized perpendicular to the c axis with the in-plane polarization ratio of 0.58 at 300 K.