Analysis of polarization-dependent gain in fiber amplifiers

Wang, L.J.; Lin, J.T.; Ye, Peida

doi:10.1109/3.661447

Cited by 14 publications

(5 citation statements)

References 12 publications

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“…For optoelectronic devices working in the mid-infrared 2-5 µm wavelengths, the InAs-based heterostructure has been adopted because of its narrow bandgap (0.36 eV at room temperature). Wang et al [13] have demonstrated a high-quality 2.2 µm InAs/InGaAs/InP highly strained multiple quantum well (QW) laser grown by gas source molecular beam epitaxy. Recently, it has been shown that a better heterointerface can be achieved by replacing InAs with InAsN alloys since nitrogen atoms are smaller than arsenic [14].…”

Section: Introductionmentioning

confidence: 99%

Shubnikov de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well

Hang

Huang

Hung

et al. 2002

Semicond. Sci. Technol.

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We present the first investigation of Shubnikov-de Haas (SdH) oscillations of two-dimensional electron gas formed in an InAsN/InGaAs single quantum well (QW) grown on an InP substrate using gas source molecular beam epitaxy and a radio-frequency (rf) plasma nitrogen source. The photoluminescence (PL) peak energy of the InAsN/InGaAs QW decreases compared with that of InAs/InGaAs QW. This agrees with the bowing effect due to the incorporation of nitrogen atoms. The nitrogen content can be estimated to be 0.4% using the PL peak positions as well as x-ray diffraction. From the SdH oscillations, the carrier concentration is 2.85 × 10 11 cm −2 and the effective mass is 0.1 ± 0.01m 0 . The enhancement of the effective mass is mainly due to the incorporation of the nitrogen atoms in the InAs lattice, which is consistent with a recent study on InAsN bulk alloys. The large increase of the effective mass cannot be explained by the simple band anticrossing model. In addition, we observe a temperatureindependent magnetoresistivity at a critical magnetic field. Our analysis supports the fact that the value of the critical exponent in the quantum Hall effect is not universal.

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Section: Introductionmentioning

confidence: 99%

Shubnikov de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well

Hang

Huang

Hung

et al. 2002

Semicond. Sci. Technol.

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“…However, if one polarization saturates the amplifier, a slight excess gain is left over in the other polarization. Noise can grow in this polarization and affect the system performance [Wang et al, 1998].…”

Section: Edf Co-operative Up-conversionmentioning

confidence: 99%

Nonlinear Fiber Ring Lasers

2012

Nonlinear Optical Systems

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The optical bistability, bifurcations and chaos phenomena of the proposed structure have been examined. Three operation regimes are obtained numerically, namely single operation, period doubling operation and chaotic operation; however only two are observed experimentally due to hardware limitations. This research work focuses mainly on nonlinear system behaviors of fiber ring lasers, which includes self phase modulation, four-wave mixing, parametric amplification, optical bistability, bifurcation and chaos. Although some of the nonlinear effects are undesirable for system design, I am able to turn these unfavorable behaviors into real use, such as ultra-high speed operation, narrow pulse generation and optical switching. The main achievements of this work have been published in papers [W1-W14].

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“…Section 3 describes the growth of InAs/InGaAs MQWs and the fabrication of the device. Although the use of highly strained (3.2%) InAs limits the layer thickness, 15,16) we have successfully achieved the stable growth of a highly strained InAs well with a layer as thick as 5 nm. A thicker well layer in a low electric field results in a deeper quantum level in the well, producing a cutoff wavelength as large as 2.4 mm.…”

Section: Introductionmentioning

confidence: 97%

InP/InGaAs Heterojunction Phototransistor Operating at Wavelengths above 2 µm Realized Using Strained InAs/InGaAs Multiquantum Well Absorption Layer

Fukano¹,

Sato²,

Mitsuhara³

et al. 2008

jjap

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A new infrared photodetector has been developed that provides a high responsivity and a low dark current. The device consists of a heterojunction phototransistor (HPT) with a strained InAs/InGaAs multiquantum well (MQW) absorption layer. The insertion of a thick strained InAs well into the low electric field region of the collector makes it possible to maintain a large excitonic effect, and a high absorption coefficient is obtained even at a wavelength as long as 2.3 mm. The photocurrent generated in the MQW absorption layer is amplified by the current gain, resulting in a high responsivity of more than 10 A/W. In addition, the small volume of the MQW in the low electric field region provides a low dark current even at room temperature.

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Analysis of polarization-dependent gain in fiber amplifiers

Cited by 14 publications

References 12 publications

Shubnikov de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well

Shubnikov de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well

Nonlinear Fiber Ring Lasers

InP/InGaAs Heterojunction Phototransistor Operating at Wavelengths above 2 µm Realized Using Strained InAs/InGaAs Multiquantum Well Absorption Layer

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