Analysis of Radiation Effects in Semiconductor Junction Devices.

Gwyn, C. W.; Scharfetter, D.L.; Wirth, Jochen

doi:10.2172/4304099

Cited by 2 publications

(2 citation statements)

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“…This technique yields not only the effective surface concentrations but also the j unction depths, the effects of out-diffusion from the substrate or buri6d layer, and the width of the epitaxial layer. The technique is non-destructive and is valid ili the presence [21][22][23][24] of neutron-induced traps and/or gold centers. Other investigators have devised techniques to establish the neutron-induced changes in the electrical characteristics of semiconductor devices by computer-sided modeling.…”

Section: -mentioning

confidence: 99%

Nuclear Radiation Effects on Silicon P--N Junctions.

Goben¹

1971

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This report was prepared as an account of work sponsored by the United States Government. Neither the United States nor the United States Atomic Energy Commission, nor any of their employees, nor any of their contractors, subcontractors, or their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness or usefulness of.any information, apparatus, product or process disclosed, or represents that its use would not infringe priva:ely owned rights.

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Section: -mentioning

confidence: 99%

Nuclear Radiation Effects on Silicon P--N Junctions.

Goben¹

1971

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“…Device simulation consisted of 1‐D drift‐diffusion (DD) models is discussed in . In a DD model, current equations are derived from the Boltzmann transport equation considering a steady state situation and numerical approximations for a 1‐D geometry.…”

Section: Introductionmentioning

confidence: 99%

Dependability evaluation of integrated circuits at design time against laser fault injection

Yuan

2011

Security Comm Networks

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Laser fault injection has been proved to be a useful tool for attacks on integrated circuits. Transistors hit by a pulse of photons causes them to conduct transiently, thereby introducing transient logic errors, such as register value modifications, memory dumping, and so on. Attackers can make use of this abnormal behavior and extract sensitive information that the devices try to protect. This paper demonstrates laser fault injection attacks on very-large-scale integration circuits in a semi-invasive way for the purpose of validating fault tolerant design and performance. Then, the paper presents a simulation methodology to evaluate the dependability of the integrated circuit design against laser fault injection attacks at design time. This simulation methodology involves exhaustively scanning the layout, incorporating the exposed cells into a circuit simulator, and examining the response of the circuit in detail. Experiments conducted on the same test chip spot the same vulnerabilities, thus indicating the validity of the proposed simulation methodology.

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Analysis of Radiation Effects in Semiconductor Junction Devices.

Cited by 2 publications

References 2 publications

Nuclear Radiation Effects on Silicon P--N Junctions.

Nuclear Radiation Effects on Silicon P--N Junctions.

Dependability evaluation of integrated circuits at design time against laser fault injection

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