Analysis of Raman spectra of amorphous-nanocrystalline silicon films

Gaisler, S. V.; Semenova, O. I.; Sharafutdinov, R. G.; Kolesov, B. A.

doi:10.1134/1.1788789

Cited by 48 publications

(37 citation statements)

References 9 publications

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“…All phonons in this part are optically Raman active and raise a broad prominent hump at~480 cm À1 . [12,23,43,44] The second mode is from the nano-regime crystalline core of the Si NPs shown as the red sphere in the NP scheme of Fig. 2, where the q-selection rule applies and gets relaxed because of the phonon confinement effect, which produces a Lorentzian line shape with a red shift in wavenumber and asymmetrical broadening.…”

Section: Analysis Of Raman Spectramentioning

confidence: 99%

“…One mode is from the amorphous‐like surface Si, to which the q ‐selection rule does not apply because of long‐range disorder. All phonons in this part are optically Raman active and raise a broad prominent hump at ~480 cm −1 . The second mode is from the nano‐regime crystalline core of the Si NPs shown as the red sphere in the NP scheme of Fig.…”

Section: Introductionmentioning

confidence: 98%

“…The second mode is from the nano‐regime crystalline core of the Si NPs shown as the red sphere in the NP scheme of Fig. , where the q ‐selection rule applies and gets relaxed because of the phonon confinement effect, which produces a Lorentzian line shape with a red shift in wavenumber and asymmetrical broadening . These two modes form most of the Raman spectrum and are henceforth referred to as the amorphous‐like surface mode and the core mode.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Size‐dependent evolution of phonon confinement in colloidal Si nanoparticles

Zhang

Feng

Anthony

et al. 2015

J Raman Spectroscopy

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A size‐dependent evolution of phonon confinement is revealed in Si nanoparticles (NPs) via Raman spectroscopy. By introducing a variable confinement factor, α, into a well‐known phenomenological phonon confinement model (PCM) developed by Richter et al., acceptable fits are achieved to downshifted and asymmetrically broadened Raman spectra of Si NPs with different diameters, d, from 2.4 nm to 6.3 nm. A comparative study using Raman spectra of colloidal Si NPs, for the first time, shows an apparent positive linear correlation between α and the Si NP size. Based on the PCM, the amplitude of the atomic vibration (phonon) at the real physical boundary of NPs is proportional to e−α/2, which indicates that the amplitude of the first order optical phonon is relatively larger at the edges for smaller Si nanostructures despite of their stronger phonon confinement weighed by α/d2. Copyright © 2015 John Wiley & Sons, Ltd.

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Section: Analysis Of Raman Spectramentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Size‐dependent evolution of phonon confinement in colloidal Si nanoparticles

Zhang

Feng

Anthony

et al. 2015

J Raman Spectroscopy

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“…A broadening of the Γ' 25 peak on the low wavenumber range being visible as a shoulder is caused by a distribution of crystallite sizes [10]. Hence, the shape of the peak could give an idea of the average crystallite size of Si.…”

Section: B Raman Measurementsmentioning

confidence: 99%

Silicon Rich Oxide with controlled mean size of silicon nanocrystals by deposition in multilayers

Quiroga

Bensch

Aceves

et al. 2009

2009 10th International Conference on Ultimate Integration of Silicon

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“…The photoluminescence spectra of the deposited films were measured using the Raman spectrometer. Nanocrystalline phase volume was determined from Raman spectra by using the method described in [17].…”

Section: Characterizationmentioning

confidence: 99%

Peculiarities of nanocrystalline silicon films growth on porous anodic alumina surface

Parfenyuk¹

2017

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The influence of porous alumina template morphology on silicon films growth at deposition by PE CVD has been investigated. As it was shown, the structural properties of silicon phases depend on the pore geometry and surface morphology of the anodized porous alumina substrate. In case of porous alumina formation in one stage, ripple-like morphology takes place. The growth of a-Si:H film is observed at deposition. After two-stage anodization, the porous alumina has tipped/ribbed morphology. In this case, usually a-Si:H film grows on the bottom of the pores, and nc-Si:H/a-Si:H one grows on the tips. In the case of deep pores, the nanocrystalline nc-Si:H film grows only above the top of the pores. The obtained results could be used when developing new types of photocells, sensors, nanophotonics and ionics devices.

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Analysis of Raman spectra of amorphous-nanocrystalline silicon films

Cited by 48 publications

References 9 publications

Size‐dependent evolution of phonon confinement in colloidal Si nanoparticles

Size‐dependent evolution of phonon confinement in colloidal Si nanoparticles

Silicon Rich Oxide with controlled mean size of silicon nanocrystals by deposition in multilayers

Peculiarities of nanocrystalline silicon films growth on porous anodic alumina surface

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