Analysis of reflectance and modulation spectroscopic lineshapes in optoelectronic device structures

Hosea, T. J. C.; Cripps, Steve C.; Sale, T.E.; Hild, K.

doi:10.1016/j.apsusc.2006.05.124

Cited by 5 publications

(5 citation statements)

References 29 publications

(56 reference statements)

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“…In Figure 4, we present the ER spectra of sample A at different reverse biases and calculate the built-in electric field strength from FKO periods. The ER line shape is given approximately by [21]…”

Section: Resultsmentioning

confidence: 99%

Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer Thicknesses

Lin

et al. 2015

International Journal of Photoenergy

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The optoelectric properties of GaInP p-i-n solar cells with different intrinsic layer (i-layer) thicknesses from 0.25 to 1 μm were studied. Both emission intensity and full width at half maximum features of the photoluminescence spectrum indicate that the optimum i-layer thickness would be between 0.5 and 0.75 μm. The integrated current results of photocurrent experiment also point out that the samples with 0.5 to 0.75 μm i-layer thicknesses have optimum value around 156 nA. Electroreflectance measurements reveal that the built-in electric field strength of the sample gradually deviates from the theoretical value larger when i-layer thickness of the sample is thicker than 0.75 μm.I-Vmeasurements also confirm crystal quality for whole samples by obtaining the information about short currents of photovoltaic performances. A series of experiments reflect that thicker i-layer structure would induce more defects generation lowering crystal quality.

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Section: Resultsmentioning

confidence: 99%

Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer Thicknesses

Lin

et al. 2015

International Journal of Photoenergy

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“…On the basis of the Franze and Keldysh theory, Shen and coworkers proposed a precise evaluation method for electric field strength by analyzing the period of FKOs existing in an ER spectrum. [24][25][26][27] The ER spectra were fitted using Eqs. ( 1) and ( 2) to extract the built-in electric field F:…”

Section: Resultsmentioning

confidence: 99%

Optical characterization of GaInP p–i–n solar cells

Li¹,

Lin²,

Ko³

et al. 2015

Jpn. J. Appl. Phys.

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Four p–i–n GaInP solar cells were grown by metal organic chemical vapor deposition (MOCVD) with different intrinsic layer thicknesses from 0.25 to 1 µm. A series of optical measurements, including electroreflectance (ER), photoluminescence (PL), electric luminescence (EL), and photocurrent (PC) measurements, have been performed to study the built-in electric field effect and to determine the suitable thickness of an intrinsic layer. The PL and EL spectra reflected the crystal quality of the GaInP layers. Furthermore, from the obtained ER spectrum, the built-in electric field in the intrinsic layer can be revealed. From the PC spectra under various bias voltages, the effect of built-in electric fields on the collection of photogenerated carriers has been studied.

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“…(b) we present the ER spectra and calculate the built-in electric field strength (F) from FKO periods. [3] The ER lineshape is given approximately by :…”

Section: Resultsmentioning

confidence: 99%