Analysis of resistances and transconductance of SiC MESFET considering fabrication parameters and mobility as a function of temperature

Abstract

In this paper, we have analyzed the resistances (specific on-resistance and drain to source resistance) and transconductance of SiC MESFET. Source diffusion, channel, drift region, epi-layer and substrate resistances those contribute to the specific on-resistance have been analyzed. Effect of change in the junction depth due to post annealing on the implant range parameter is also considered. Half of change in the junction depth is added to the implant range parameter (before annealing). Straggle parameter is changed by diffusion coefficient and annealing time. Temperature dependency of mobility is also considered in all parameters. The variation of transconductance taking the drain to source voltage as a parameter has also been analyzed. Our analysis provides in-depth knowledge about the operation and characteristics of the high-power SiC MESFETs.

Calculating magnetic properties of two-dimensional materials for memory applications

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Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs

“…As shown in Figure 7a, the V TH transients are not affected by the applied V GH , while a reduction in the R ON drift is observed for higher V GH . This can actually be ascribed to the fact that at higher V GH , the device transconductance (g m ) degrades [23], yielding a negligible impact on the overdrive voltage (i.e., V GS -V TH ) variations on the device current and, consequently, on R ON . On the other hand, at lower V GH , variations in the V TH affect the device current (i.e., R ON ), due to a less degraded g m [23].…”

“…This can actually be ascribed to the fact that at higher V GH , the device transconductance (g m ) degrades [23], yielding a negligible impact on the overdrive voltage (i.e., V GS -V TH ) variations on the device current and, consequently, on R ON . On the other hand, at lower V GH , variations in the V TH affect the device current (i.e., R ON ), due to a less degraded g m [23]. Accordingly, the R ON variation increases with decreasing V GH from 20 V to 15 V (see Figure 8a), even though the associated V TH transients present negligible differences (i.e., the V TH drift is the same).…”

“…The fact that similar trends were observed on both V TH and R ON degradation confirms that the observed instabilities share the same origin. Particularly, the R ON drift is a direct consequence of the V TH one, since at V GH = 15 V, the less degraded g m [23] makes the device current (i.e., R ON ) highly sensitive on the overdrive voltage (i.e., V GH -V TH ). Accordingly, the significant impact of the drain stress voltage observed on V TH yields an additional R ON drift at V PH = 500 V, whereas a negligible effect is observed at 100 V and 250 V.…”