Analysis of RF scattering parameters and noise and power performances of RF‐power MOS in 0.15‐μm RF cmos technology for RF SOC applications

Lin, Yo-Sheng

doi:10.1002/mop.20089

Cited by 6 publications

(4 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Essentially, the kink is due to the transition of the output impedance (

Z_{out}

) from a low‐frequency series RC network to a high‐frequency parallel RC network 13,14 . The true underlying cause of the effect is still a topic for discussion 1–7 . It is known that intrinsic elements, such as the transconductance (

g_{m}

), capacitances (

C_{gs},

C_{gd}

, and

C_{ds}

) contribute to this phenomenon 3,4 .…”

Section: Introductionmentioning

confidence: 99%

“…Recently, the kink effect (KE) is gaining increasing attention for its impact on the output reflection coefficient (S22) of GaN based high‐electron‐mobility transistors (HEMTs), 1–11 which is one of the most prevalent transistor technologies adopted in present wireless communication devices. The KE is typically visible as an abrupt change in the shape of S22, at a certain frequency, when plotted on the Smith chart.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Analysis and modeling of the kink effect in S22 based on support vector machine for GaN HEMTs

Zhu

Geng

Cai

et al. 2022

Int J Numerical Modelling

View full text Add to dashboard Cite

In this work, the kink effect (KE), typically visible in S22, is analyzed and modeled. Two different modeling techniques: equivalent circuit modeling (ECM) method and machine learning method which based on support vector regression (SVR) technique are presented and compared, when applied to the S22 behavior of a Gallium Nitride (GaN) high electron mobility transistor (HEMT). The device under test (DUT) has a width of 8 Â 125 μm, with a gate feature size of 0.25 μm. The proposed method identifies the effect that the bias voltage and extrinsic elements have on the S22 kink shape. Additionally, compared to ECM, the SVR model attains a superior fitting accuracy across the complete frequency band.

show abstract

“…Essentially, the kink is due to the transition of the output impedance (

Z_{out}

g_{m}

), capacitances (

C_{gs},

C_{gd}

, and

C_{ds}

) contribute to this phenomenon 3,4 .…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Analysis and modeling of the kink effect in S22 based on support vector machine for GaN HEMTs

Zhu

Geng

Cai

et al. 2022

Int J Numerical Modelling

View full text Add to dashboard Cite

show abstract

“…In the last two decades several studies have been addressed to investigate the kink effect (KE) in the scattering parameter S 22 for microwave transistors [1][2][3][4][5][6][7][8][9][10][11][12][13]. This phenomenon is often referred to as 'anomalous dip' and basically its appearance has been attributed to the transition of the output impedance (Z out ) from a low-frequency series RC circuit to a high-frequency parallel RC circuit [1].…”

Section: Introductionmentioning

confidence: 99%

Thermal influence on S₂₂ kink behavior of a 0.15 μm gate length AlGaN/GaN/SiC HEMT for microwave applications

Alim

Rezazadeh

Gaquière

et al. 2019

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Thermal influence on S 22 kink behavior has been carried out on a 0.15 μm gate length AlGaN/ GaN/SiC high electron mobility transistor over a wide range of temperature. The size and the shape of the S 22 kink effect (KE) in terms of biasing and temperature have been evaluated. The main finding is that S 22 of the studied device is affected by two kinks: the first one appears at approximately 19 GHz and then the second one appears at about 43 GHz. The impact of the intrinsic circuit parameters on the S 22 kink phenomena is inspected to assess their contribution. In addition, a new procedure is proposed to quantify this type of phenomenon by defining the kink area as the area between the two curves corresponding to S 22 with and without the KE. The relevance of this study emerges from the fact that an exhaustive characterization of these anomalous phenomena can empower RF engineers to effectively take them into account for both modeling and design purposes.

show abstract

“…Furthermore, attention is given to the kink effect in the output reflection coefficient (S 22 ) and to the peak in the magnitude of the short circuit current‐gain (h 21 ), because the GaN technology is prone to be affected by these two phenomena. The former has to be primarily ascribed to the relatively high transconductance , while the latter originates mainly from the relatively large intrinsic capacitances . For the sake of completeness, experimental results are presented to highlight the key role of GaN HEMT models for a successful design of power amplifiers (PAs).…”

Section: Introductionmentioning

confidence: 99%

Empowering GaN HEMT models: The gateway for power amplifier design

Crupi

Vadalà

Colantonio

et al. 2015

Int J Numerical Modelling

View full text Add to dashboard Cite

The purpose of this invited paper is to give readers a comprehensive and critical overview on how to extract equivalent-circuit models for GaN HEMTs, which are the preferred devices for high-power high-frequency applications. This overview is meant to provide a practical modeling know-how for this advanced type of transistor, in order to support its development for improving device technology and circuit design. With the aim to broaden knowledge to empower models, experimental results are presented as illustrative examples of the most crucial challenges faced by the microwave engineers in modeling high-power GaN HEMTs. All the relevant aspects are covered, going from linear (also noise) to nonlinear models. The analysis is mainly focused on the modeling of distinctive peculiarities of GaN HEMTs. Particular attention is paid to study the importance of accurately modeling the kink effect in the output reflection coefficient, because of the relatively high transconductance, the peak in the magnitude of the short circuit current-gain, because of the relatively large intrinsic capacitances, and the low-frequency dispersion, because of trapping and thermal effects. Furthermore, to emphasize the key role of accurate device models for a successful circuit design, a practical example of power amplifier is discussed. Copyright © 2015 John Wiley & Sons, Ltd

show abstract

Analysis of RF scattering parameters and noise and power performances of RF‐power MOS in 0.15‐μm RF cmos technology for RF SOC applications

Cited by 6 publications

References 19 publications

Analysis and modeling of the kink effect in S22 based on support vector machine for GaN HEMTs

Analysis and modeling of the kink effect in S22 based on support vector machine for GaN HEMTs

Thermal influence on S₂₂ kink behavior of a 0.15 μm gate length AlGaN/GaN/SiC HEMT for microwave applications

Empowering GaN HEMT models: The gateway for power amplifier design

Contact Info

Product

Resources

About

Analysis of RF scattering parameters and noise and power performances of RF‐power MOS in 0.15‐μm RF cmos technology for RF SOC applications

Cited by 6 publications

References 19 publications

Analysis and modeling of the kink effect in S22 based on support vector machine for GaN HEMTs

Analysis and modeling of the kink effect in S22 based on support vector machine for GaN HEMTs

Thermal influence on S22 kink behavior of a 0.15 μm gate length AlGaN/GaN/SiC HEMT for microwave applications

Empowering GaN HEMT models: The gateway for power amplifier design

Contact Info

Product

Resources

About

Thermal influence on S₂₂ kink behavior of a 0.15 μm gate length AlGaN/GaN/SiC HEMT for microwave applications