Analysis of SiC Technology in Two-Level and Three-Level Converters for Aerospace Applications

Abstract

There is a growing need for highly efficient, power dense DC-AC converters to support a number of future more electric aircraft technologies. SiC has been identified as a potential technology to improve the efficiency of these converters. To analyse the semiconductor losses, this paper presents the semiconductor loss equations for the two-level converter (2LC), three-level neutral point clamped converter (3LNPCC) and the three-level T-Type converter (3LTTC). Based on the equations and current datasheet information, it is identified that SiC technology offers significant reductions in losses compared with traditional Si devices. The paper also discusses a number of hybrid device combinations to achieve the benefits of high efficiency in SiC technology and low cost of Si technology. Based on the semiconductor losses the converter efficiencies in the SiC 2LC and the 3LTTCs are about 3-4 % higher than in the Si 2LC for a 42 kW three phase converter operating at a 25 kHz switching frequency.

Heterodyne multiplier‐based inverter

“…In recent years there have been several attempts to realise the frequency multiplication method in the field of power electronics inverters [3][4][5][6][7][8][9][10][11][12][13][14][15], on the assumption that it would allow the generation of cleaner signals, i.e. with relatively low THD values.…”

Multi-Phase Modular Drive System: A Case Study in Electrical Aircraft Applications

“…For high performance drive systems, the switching device needs to be selected based on its performance given the targeted operating conditions. SiC MOSFET technology is chosen for its reduced power losses for switching frequencies higher than 12 kHz [20][21][22]. The CAS325M12HM2 [19] MOSFET from CREE is rated at 1.2 kV, 444 A, which is convenient for the application considered here.…”

“…The efficiency of this topology can be improved, granted the reduction of switching losses through the use of advanced semiconductor power switches such as Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistor (SiC MOSFETs). Recently, SiC powered MOSFETs are being considered as serious candidates in designing power converters for different applications due to their superior material advantages, such as wider bandgap, high thermal conductivity and higher critical breakdown field strength [19,20]. They can provide lower power losses than Si devices and consequently increase the efficiency of power converters at switching frequencies higher than 12 kHz, [21].…”

High Performance SiC MOSFETs for Fault Tolerant Applications

“…Thus, Silicon Carbide (SiC) power MOSFET modules are serious candidates. For switching frequencies higher than 12 kHz, they provide lower power losses than Si devices [2]- [5], increasing the efficiency of SiC MOSFETs based converters as a result. Low power losses to dissipate favor the reduction of volume and weight of the heat sink.…”