2018
DOI: 10.1109/tns.2017.2781145
|View full text |Cite
|
Sign up to set email alerts
|

Analysis of Single-Event Effects in DDR3 and DDR3L SDRAMs Using Laser Testing and Monte-Carlo Simulations

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

0
5
0

Year Published

2018
2018
2023
2023

Publication Types

Select...
4
1

Relationship

0
5

Authors

Journals

citations
Cited by 5 publications
(5 citation statements)
references
References 18 publications
0
5
0
Order By: Relevance
“…Using radioactive soruce i.e. (Ionizing Radiations) to produce SEUs such as bit-flips is not a novel idea per-se [16]- [18], [20], [26], [28]. Our paper makes an effort to understand the possibility to use such events as a potential source of exploitation or a source of harmful errors on quantum machines.…”
Section: Discussionmentioning
confidence: 99%
See 4 more Smart Citations
“…Using radioactive soruce i.e. (Ionizing Radiations) to produce SEUs such as bit-flips is not a novel idea per-se [16]- [18], [20], [26], [28]. Our paper makes an effort to understand the possibility to use such events as a potential source of exploitation or a source of harmful errors on quantum machines.…”
Section: Discussionmentioning
confidence: 99%
“…In a paper from 2005 of Franco et al [17] show how to generate soft errors in commercial SRAM with low energy neutrons produced at a clinical facility. With respect to SDRAM which is the most common memory used in COTS devices, a 2018 paper from Kohler et.al [16] shows that multiple kinds of errors (e.g. single-event effects (SEE), single bit upsets (SEUs), multiplebit upsets (MBUs), multiple cell upsets (MCUs), latch-up (SEL), and functional interrupt (SEFI).)…”
Section: Related Workmentioning
confidence: 99%
See 3 more Smart Citations