Analysis of Snapback Phenomena in VDMOS Transistor having the High Second Breakdown Current: A High ESD Mechanism Analysis

Abstract

We proposed the balanced vertical double ‐ diffused MOS (B‐VDMOS) transistor. The B‐VDMOS transistor is not destroyed by avalanche breakdown and acquires the high second breakdown current. Owing to the high second breakdown current, the B‐VDMOS transistor has high electrostatic discharge (ESD) robustness. This paper presents the mechanism of the snapback phenomena and clarifies the cause that the B‐VDMOS transistor has the high second breakdown current. We find the cause that current does not become concentrated even after avalanche breakdown in the B‐VDMOS transistor. Copyright © 2009 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.

ESD robustness improvement for integrated DMOS transistors —the different gate‐voltage dependence of It2 between VDMOS and LDMOS transistors

“…This hot spot moves around by the push‐out of the electric field because of Kirk effect and is driven by the increase of electric field and the temperature gradient. This effect is called ‘filament movement’ and has been reported in earlier studies [16–18].…”

“…This section provides ESD robustness improvement for the VDMOS transistor [14–16]. Figures 2 and 3 show the cross‐sectional structure of VDMOS transistors; Fig.…”